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型号	功能描述	生产厂家&企业	LOGO
MBM29DL323TE	32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase	Fujitsu 富士通	Fujitsu
MBM29DL323TE12PBT	32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase	Fujitsu 富士通	Fujitsu
MBM29DL323TE-12PBT	32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase	Fujitsu 富士通	Fujitsu
MBM29DL323TE12TN	32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase	Fujitsu 富士通	Fujitsu
MBM29DL323TE-12TN	32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase	Fujitsu 富士通	Fujitsu
MBM29DL323TE12TR	32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase	Fujitsu 富士通	Fujitsu
MBM29DL323TE-12TR	32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase	Fujitsu 富士通	Fujitsu
MBM29DL323TE80PBT	FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase	spansionSPANSION 飞索飞索半导体	spansion
MBM29DL323TE80PBT	32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase	Fujitsu 富士通	Fujitsu
MBM29DL323TE-80PBT	32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase	Fujitsu 富士通	Fujitsu
MBM29DL323TE80TN	32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase	Fujitsu 富士通	Fujitsu
MBM29DL323TE80TN	FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase	spansionSPANSION 飞索飞索半导体	spansion
MBM29DL323TE-80TN	32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase	Fujitsu 富士通	Fujitsu
MBM29DL323TE80TR	32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase	Fujitsu 富士通	Fujitsu
MBM29DL323TE80TR	FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase	spansionSPANSION 飞索飞索半导体	spansion
MBM29DL323TE-80TR	32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase	Fujitsu 富士通	Fujitsu
MBM29DL323TE90PBT	32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase	Fujitsu 富士通	Fujitsu
MBM29DL323TE90PBT	FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase	spansionSPANSION 飞索飞索半导体	spansion
MBM29DL323TE-90PBT	32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase	Fujitsu 富士通	Fujitsu
MBM29DL323TE90TN	32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase	Fujitsu 富士通	Fujitsu
MBM29DL323TE90TN	FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase	spansionSPANSION 飞索飞索半导体	spansion
MBM29DL323TE-90TN	32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase	Fujitsu 富士通	Fujitsu
MBM29DL323TE90TR	32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase	Fujitsu 富士通	Fujitsu
MBM29DL323TE90TR	FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase	spansionSPANSION 飞索飞索半导体	spansion
MBM29DL323TE-90TR	32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase	Fujitsu 富士通	Fujitsu
A29DL323	32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode) GENERAL DESCRIPTION The A29DL32x family consists of 32 megabit, 3.0 volt-only flash memory devices, organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. Word mode data appears on I/O0–I/O15; byte mode data appears on I/O0–I/O7. The device is designed to be programmed in	AMICC 欧密格光电	AMICC
A29DL323	32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory GENERAL DESCRIPTION The A29DL32x family consists of 32 megabit, 3.0 volt-only flash memory devices, organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. Word mode data appears on I/O0–I/O15; byte mode data appears on I/O0–I/O7. The device is designed to be programmed in	AMICC 欧密格光电	AMICC
A29DL323V	32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory GENERAL DESCRIPTION The A29DL32x family consists of 32 megabit, 3.0 volt-only flash memory devices, organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. Word mode data appears on I/O0–I/O15; byte mode data appears on I/O0–I/O7. The device is designed to be programmed in	AMICC 欧密格光电	AMICC
AM29DL323D	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 文件：955.29 Kbytes Page：58 Pages	AMD 超威半导体	AMD
AM29DL323D	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 文件：958.45 Kbytes Page：58 Pages	AMD 超威半导体	AMD

MBM29DL323TE产品属性

类型
描述
型号
MBM29DL323TE
制造商
FUJITSU
制造商全称
Fujitsu Component Limited.
功能描述
32M(4M x 8/2M x 16) BIT Dual Operation

MBM29DL323TE供应商更多...

更新时间：2025-8-13 22:58:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市凌旭科技有限公司	MBM29DL323TE-90PFTN	FUJISU	2016+	TSSOP48	9000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市威雅利发展有限公司	MBM29DL323TE-90PFTN	FUJITSU	0605+	TSOP48	855	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市明嘉莱科技有限公司	MBM29DL323TE-90PFTN	FUJITSU/富士通	04+	TSOP48	880000	明嘉莱只做原装正品现货	询价
深圳市科恒伟业电子有限公司	MBM29DL323TE-90PFTN	FUJITSU	1926+	TSOP	6852	只做原装正品现货!或订货假一赔十!	询价
深圳市赛美科科技有限公司	MBM29DL323TE90TN-JE1	FUJITSU		TSOP48	9500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市宏世佳电子科技有限公司	MBM29DL323TE-90PFTN	FUJITSU	2025+	TSOP48	3715	全新原厂原装产品、公司现货销售	询价
深圳市华来深电子有限公司	MBM29DL323TE-90	FUJITSU	23+	BGA63	8560	受权代理!全新原装现货特价热卖!	询价
深圳市汇莱威科技有限公司	MBM29DL323TE-90	FUJITSU	24+	BGA624	23000	免费送样原盒原包现货一手渠道联系	询价
深圳市昌和盛利电子有限公司	MBM29DL323TE-90PFTN	FUJITSU	23+	TSOP	9516		询价
深圳市佳鑫美电子科技有限公司	MBM29DL323TE-90PFTN	FUJITSU	24+	TSOP	2987	只售原装自家现货!诚信经营!欢迎来电!	询价

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MBM29DL323TE产品属性

MBM29DL323TE供应商更多...

MBM29DL323TE芯片相关品牌

MBM29DL323TE规格书下载地址

MBM29DL323TE参数引脚图相关

MBM29DL323TE数据表相关新闻

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DdatasheetPDF页码索引