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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBM29DL323TE | 32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | FUJITSU 富士通 |   | |
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | FUJITSU 富士通 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | FUJITSU 富士通 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | FUJITSU 富士通 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | FUJITSU 富士通 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | FUJITSU 富士通 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | FUJITSU 富士通 | | ||
FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | SPANSION 飞索 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | FUJITSU 富士通 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | FUJITSU 富士通 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | FUJITSU 富士通 | | ||
FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | SPANSION 飞索 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | FUJITSU 富士通 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | FUJITSU 富士通 | | ||
FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | SPANSION 飞索 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | FUJITSU 富士通 | | ||
FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | SPANSION 飞索 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | FUJITSU 富士通 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | FUJITSU 富士通 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | FUJITSU 富士通 | | ||
FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | SPANSION 飞索 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | FUJITSU 富士通 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | FUJITSU 富士通 | | ||
FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | SPANSION 飞索 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | FUJITSU 富士通 | | ||
32M (4M X 8/2M X 16) BIT Dual Operation ■ GENERAL DESCRIPTION The MBM29DL32XTD/BD are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. The MBM29DL32XTD/BD are offered in a 48-pin TSOP(I) and FBGA Package. These devices are designed to be programmed in-system with the standard system 3 | FUJITSU 富士通 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | FUJITSU 富士通 | | ||
32M (4M X 8/2M X 16) BIT Dual Operation ■ GENERAL DESCRIPTION The MBM29DL32XTD/BD are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. The MBM29DL32XTD/BD are offered in a 48-pin TSOP(I) and FBGA Package. These devices are designed to be programmed in-system with the standard system 3 | FUJITSU 富士通 | | ||
32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode) GENERAL DESCRIPTION The A29DL32x family consists of 32 megabit, 3.0 volt-only flash memory devices, organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. Word mode data appears on I/O0–I/O15; byte mode data appears on I/O0–I/O7. The device is designed to be programmed in | AMICC 联笙电子 | |
MBM29DL323TE产品属性
- 类型
描述
- 型号
MBM29DL323TE
- 制造商
FUJITSU
- 制造商全称
Fujitsu Component Limited.
- 功能描述
32M(4M x 8/2M x 16) BIT Dual Operation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FUJISU |
2016+ |
TSSOP48 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
FUJITSU |
0605+ |
TSOP48 |
855 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FUJITSU |
24+ |
BGA |
5632 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
FUJITSU |
23+ |
BGA63 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
FUJITSU |
25+ |
TSOP48 |
6410 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
FUJI |
25+ |
13 |
全新原装!优势库存热卖中! |
||||
FUJITSU/富士通 |
04+ |
TSOP48 |
880000 |
明嘉莱只做原装正品现货 |
|||
FUJITSU |
23+ |
BGA63 |
12800 |
公司只有原装 欢迎来电咨询。 |
|||
FUJITSU |
25+23+ |
TSOP |
36391 |
绝对原装正品全新进口深圳现货 |
|||
25+ |
TSSOP |
2860 |
原厂原装正品价格优惠公司现货欢迎查询 |
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MBM29DL323TE规格书下载地址
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DdatasheetPDF页码索引
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