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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBM29DL322BE | 32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | Fujitsu 富士通 |   | |
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | Fujitsu 富士通 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | Fujitsu 富士通 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | Fujitsu 富士通 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | Fujitsu 富士通 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | Fujitsu 富士通 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | Fujitsu 富士通 | | ||
FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | spansion 飞索 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | Fujitsu 富士通 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | Fujitsu 富士通 | | ||
FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | spansion 飞索 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | Fujitsu 富士通 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | Fujitsu 富士通 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | Fujitsu 富士通 | | ||
FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | spansion 飞索 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | Fujitsu 富士通 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | Fujitsu 富士通 | | ||
FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | spansion 飞索 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | Fujitsu 富士通 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | Fujitsu 富士通 | | ||
FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | spansion 飞索 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | Fujitsu 富士通 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | Fujitsu 富士通 | | ||
FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | spansion 飞索 | | ||
32M (4M x 8/2M x 16) BIT Dual Operation ■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase | Fujitsu 富士通 | | ||
FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation | spansion 飞索 | | ||
32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory GENERAL DESCRIPTION The A29DL32x family consists of 32 megabit, 3.0 volt-only flash memory devices, organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. Word mode data appears on I/O0–I/O15; byte mode data appears on I/O0–I/O7. The device is designed to be programmed in | AMICC 联笙电子 | | ||
32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory GENERAL DESCRIPTION The A29DL32x family consists of 32 megabit, 3.0 volt-only flash memory devices, organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. Word mode data appears on I/O0–I/O15; byte mode data appears on I/O0–I/O7. The device is designed to be programmed in | AMICC 联笙电子 | | ||
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 文件：691.57 Kbytes Page：52 Pages | AMD 超威半导体 | | ||
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 文件：1.040369 Mbytes Page：54 Pages | AMD 超威半导体 | | ||
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 文件：1.08076 Mbytes Page：56 Pages | AMD 超威半导体 | |
MBM29DL322BE产品属性
- 类型
描述
- 型号
MBM29DL322BE
- 制造商
FUJITSU
- 制造商全称
Fujitsu Component Limited.
- 功能描述
32M(4M x 8/2M x 16) BIT Dual Operation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FUJITSU |
25+ |
TSOP |
2679 |
原装优势!绝对公司现货!可长期供货! |
|||
FUJITSU/富士通 |
23+ |
TSOP |
9870 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
FUJITSU/富士通 |
2450+ |
SSOP48 |
6540 |
只做原厂原装正品现货或订货!终端工厂可以申请样品! |
|||
FUJITSU |
24+ |
TSOP48 |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
|||
FUJITSU |
25+ |
TSOP |
86910 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
|||
FUJITSU/富士通 |
2025+ |
TSOP-48 |
5000 |
原装进口价格优 请找坤融电子! |
|||
FUJ |
25+ |
TSOP |
18000 |
原厂直接发货进口原装 |
|||
FUJITSU |
23+ |
TSOP |
8650 |
受权代理!全新原装现货特价热卖! |
|||
FUJITSU/富士通 |
24+ |
NA/ |
3910 |
原装现货,当天可交货,原型号开票 |
|||
FUJITSU/富士通 |
23+ |
TSOP |
50000 |
全新原装正品现货,支持订货 |
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MBM29DL322BE规格书下载地址
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DdatasheetPDF页码索引
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