型号 功能描述 生产厂家 企业 LOGO 操作

16M (2M x 8/1M x 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTD/BD are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTD/BD are offered in a 48-pin TSOP(I) and 48-ball FBGA Package. These devices are designed to be programmed in-system with the standard

Fujitsu

富士通

FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard s

spansion

飞索

16M (2M x 8/1M x 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTD/BD are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTD/BD are offered in a 48-pin TSOP(I) and 48-ball FBGA Package. These devices are designed to be programmed in-system with the standard

Fujitsu

富士通

16M (2M x 8/1M x 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTD/BD are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTD/BD are offered in a 48-pin TSOP(I) and 48-ball FBGA Package. These devices are designed to be programmed in-system with the standard

Fujitsu

富士通

FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard s

spansion

飞索

FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard s

spansion

飞索

FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard s

spansion

飞索

FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard s

spansion

飞索

FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard s

spansion

飞索

16M (2M x 8/1M x 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTD/BD are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTD/BD are offered in a 48-pin TSOP(I) and 48-ball FBGA Package. These devices are designed to be programmed in-system with the standard

Fujitsu

富士通

16M (2M x 8/1M x 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTD/BD are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTD/BD are offered in a 48-pin TSOP(I) and 48-ball FBGA Package. These devices are designed to be programmed in-system with the standard

Fujitsu

富士通

16 Megabit (2M x 8-Bit/1M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

文件:738.2 Kbytes Page:47 Pages

AMICC

联笙电子

Stacked Multi-Chip Package (MCP) Flash Memory and SRAM

文件:830.46 Kbytes Page:57 Pages

AMD

超威半导体

16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory

文件:548.19 Kbytes Page:48 Pages

Hynix

海力士

MBM29DL163BE产品属性

  • 类型

    描述

  • 型号

    MBM29DL163BE

  • 制造商

    FUJITSU

  • 制造商全称

    Fujitsu Component Limited.

  • 功能描述

    16M(2M X 8/1M X 16) BIT Dual Operation

更新时间:2025-10-31 18:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FUJI
2025+
TSSOP
3565
全新原厂原装产品、公司现货销售
FUJITSU/富士通
24+
NA/
800
优势代理渠道,原装正品,可全系列订货开增值税票
富士通
TSSOP
68500
一级代理 原装正品假一罚十价格优势长期供货
FUJITSU
25+23+
TSOP
22197
绝对原装正品全新进口深圳现货
FUJI
22+
BGA
3000
原装正品,支持实单
富士通
23+24
TSSOP
29650
原装正品优势渠道价格合理.可开13%增值税发票
FUJITSU/富士通
2450+
TSSOP
8850
只做原装正品假一赔十为客户做到零风险!!
FUJITSU
08+
SOP
35
一级代理,专注军工、汽车、医疗、工业、新能源、电力
FUJITSU/富士通
24+
BGA
22055
郑重承诺只做原装进口现货
FUJ
20+
TSSOP
2960
诚信交易大量库存现货

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