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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MBD110DWT1G | DualSchottkyBarrierDiodes Applicationcircuitdesignsaremovingtowardtheconsolidationof devicecountandintosmallerpackages.ThenewSOT−363packageisa solutionwhichsimplifiescircuitdesign,reducesdevicecount,andreduces boardspacebyputtingtwodiscretedevicesinonesmallsix−leaded package.TheS | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  |   |
MBD110DWT1G | 封装/外壳：6-TSSOP，SC-88，SOT-363 包装：卷带（TR） 描述：RF DIODE SCHOTTKY 7V 120MW SC88 分立半导体产品 二极管 - 射频 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
MBD110DWT1G | DualSchottkyBarrierDiodes 文件：155.73 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
MBD110DWT1G | DualSchottkyBarrierDiodes 文件：64.3 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
MBD110DWT1G | DualSchottkyBarrierDiodes 文件：112.01 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
DualSchottkyBarrierDiodes Features ●ExtremelyLowMinorityCarrierLifetime ●VeryLowCapacitance ●LowReverseLeakage | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 |  | | |
DualSchottkyBarrierDiodes DualSchottkyBarrierDiodes Applicationcircuitdesignsaremovingtowardtheconsolidationofdevicecountandintosmallerpackages.ThenewSOT–363packageisasolutionwhichsimplifiescircuitdesign,reducesdevicecount,andreducesboardspacebyputtingtwodiscretedevicesinonesmall | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 |  | | |
DualSchottkyBarrierDiodes Applicationcircuitdesignsaremovingtowardtheconsolidationofdevicecountandintosmallerpackages.ThenewSOT−363packageisasolutionwhichsimplifiescircuitdesign,reducesdevicecount,andreducesboardspacebyputtingtwodiscretedevicesinonesmallsix−leadedpackage.TheSOT−3 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
DualSCHOTTKYBarrierDiodes Applicationcircuitdesignsaremovingtowardtheconsolidationofdevicecountandintosmallerpackages.ThenewSOT–363packageisasolutionwhichsimplifiescircuitdesign,reducesdevicecount,andreducesboardspacebyputtingtwodiscretedevicesinonesmallsix–leadedpackage.TheSOT–3 | LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司 |  | | |
DualSCHOTTKYBarrierDiodes 文件：414.6 Kbytes Page：4 Pages | ETLE-Tech Electronics LTD 亚历电子亚历电子有限公司 |  | | |
DualSchottkyBarrierDiodes 文件：155.73 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
DualSchottkyBarrierDiodes 文件：112.01 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
MBD110DWT1G产品属性
- 类型
描述
- 型号
MBD110DWT1G
- 功能描述
肖特基二极管与整流器 7V 120mW Dual Isolated
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT |
97 |
3000 |
公司优势库存 热卖中!! |
||||
ON |
22+ |
NA |
2925 |
原装正品支持实单 |
|||
ON/安森美 |
23+ |
NA |
25630 |
原装正品 |
|||
ON/安森美 |
NA |
275000 |
一级代理原装正品,价格优势,长期供应! |
||||
ON/安森美 |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
Microbridge |
25+ |
QFN-16 |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
ON/安森美 |
22+ |
N/A |
42000 |
现货,原厂原装假一罚十! |
|||
MOT |
05+ |
原厂原装 |
4338 |
只做全新原装真实现货供应 |
|||
Microbridge |
24+ |
QFN-16 |
9860 |
全新原装现货/假一罚百! |
|||
三年内 |
1983 |
只做原装正品 |
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MBD110DWT1G规格书下载地址
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2019-3-7
DdatasheetPDF页码索引
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