SILICON SCHOTTKY BARRIER DIODES

Designed primarily for UHF mixer applications but suitable also for use in detector and ultra−fast switching circuits. Supplied in an inexpensive plastic package for low−cost, high−volume consumer requirements. Also available in Surface Mount package. Features • Low Noise Figure − 6.0 dB Typ @ 1

Schottky Barrier Diodes

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封装/外壳：TO-226-2，TO-92-2（TO-226AC） 包装：卷带（TR） 描述：RF DIODE SCHOTTKY 7V 280MW TO92 分立半导体产品 二极管 - 射频

Schottky Barrier Diodes

Designed primarily for UHF mixer applications but suitable also for use in detector and ultra−fast switching circuits. Supplied in an inexpensive plastic package for low−cost, high−volume consumer requirements. Also available in Surface Mount package. Features • Low Noise Figure − 6.0 dB Typ @ 1

Schottky Barrier Diodes

文件：65.08 Kbytes Page：4 Pages

Schottky Barrier Diodes

文件：65.08 Kbytes Page：4 Pages

封装/外壳：TO-226-2，TO-92-2（TO-226AC） 包装：卷带（TR） 描述：RF DIODE SCHOTTKY 7V 280MW TO92 分立半导体产品 二极管 - 射频

Schottky Barrier Diodes

HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

WIDE BAND AMPLIFIER CHIPS

DESCRIPTION PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a medium power amplifier in the same frequency band. These devices are most suitable for the

Operational Amplifiers

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Operational Amplifiers

文件：509.25 Kbytes Page：17 Pages