4 M (512 K X 8) Bit SPI

DESCRIPTION MB85RS4MT is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 524,288 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS4MT adopts the Serial Peripheral Interface (SPI).

FeRAM - SPI接口 (一般用途)

4 M (512 K X 8) Bit SPI

DESCRIPTION MB85RS4MT is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 524,288 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS4MT adopts the Serial Peripheral Interface (SPI).

4 M (512 K X 8) Bit SPI

DESCRIPTION MB85RS4MT is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 524,288 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS4MT adopts the Serial Peripheral Interface (SPI).

4M (512 K x 8) Bit SPI

DESCRIPTION MB85RS4MTY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 524,288 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu

4M (512 K x 8) Bit SPI

DESCRIPTION MB85RS4MTY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 524,288 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu

封装/外壳：8-SOIC（0.209"，5.30mm 宽） 包装：卷带（TR） 描述：IC FRAM 4MBIT SPI 40MHZ 8SOP 集成电路（IC） 存储器

封装/外壳：8-SOIC（0.209"，5.30mm 宽） 包装：托盘 描述：IC FRAM 4MBIT SPI 40MHZ 8SOP 集成电路（IC） 存储器

符合AEC-Q100标准的SPI FeRAM系列产品

4M (512 K X 8) Bit SPI

DESCRIPTION MB85RS4MLY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 524,288 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu