128K (16 K X 8) Bit SPI

DESCRIPTION MB85RS128B is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS128B adopts the Serial Peripheral Interface (SPI).

128 K (16 K횞8) ?볝긿?늆PI

文件：303.7 Kbytes Page：32 Pages

FeRAM - SPI接口 (一般用途)

128K (16 K X 8) Bit SPI

DESCRIPTION MB85RS128B is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS128B adopts the Serial Peripheral Interface (SPI).

128K (16 K X 8) Bit SPI

DESCRIPTION MB85RS128B is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS128B adopts the Serial Peripheral Interface (SPI).

128K (16 K X 8) Bit SPI

DESCRIPTION MB85RS128B is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS128B adopts the Serial Peripheral Interface (SPI).

128K (16 K X 8) Bit SPI

DESCRIPTION MB85RS128B is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS128B adopts the Serial Peripheral Interface (SPI).

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：托盘 描述：IC FRAM 128KBIT SPI 33MHZ 8SOP 集成电路（IC） 存储器

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：散装 描述：IC FRAM 128KBIT SPI 33MHZ 8SOP 集成电路（IC） 存储器

128K (16K X 8) Bit SPI

DESCRIPTION MB85RS128TY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu

Memory FRAM 128K (16 K x 8) Bit SPI

文件：224.78 Kbytes Page：20 Pages