Memory FRAM 64 K (8 K x 8) Bit I2C

文件：143.99 Kbytes Page：20 Pages

64 K (8 K x 8) Bit I2C

 DESCRIPTION The MB85RC64V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64V is able to retain data w

64 K (8 K x 8) Bit I2C

 DESCRIPTION The MB85RC64V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64V is able to retain data w

64 K (8 K x 8) Bit I2C

 DESCRIPTION The MB85RC64V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64V is able to retain data w

64 K (8 K x 8) Bit I2C

 DESCRIPTION The MB85RC64V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64V is able to retain data w

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：散装 描述：IC FRAM 64KBIT I2C 1MHZ 8SOP 集成电路（IC） 存储器

64 K (8 K x 8) Bit I2C

 DESCRIPTION The MB85RC64A is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64A is able to retain data w

64 K (8 K 횞 8) ?볝긿?뉹2C

文件：304.79 Kbytes Page：32 Pages

64 K (8 K 횞 8) Bit I2C

文件：287.29 Kbytes Page：28 Pages

64 K (8 K 횞 8) Bit I2C

文件：143.99 Kbytes Page：20 Pages