1M (128 K x 8) Bit I2C

 DESCRIPTION The MB85RC1MT is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC1MT is able to retain data

FeRAM (I2C接口)

1M (128 K x 8) Bit I2C

 DESCRIPTION The MB85RC1MT is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC1MT is able to retain data

1M (128 K x 8) Bit I2C

 DESCRIPTION The MB85RC1MT is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC1MT is able to retain data

1M (128 K x 8) Bit I2C

 DESCRIPTION The MB85RC1MT is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC1MT is able to retain data

1M (128 K x 8) Bit I2C

 DESCRIPTION The MB85RC1MT is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC1MT is able to retain data

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：托盘 描述：IC FRAM 1MBIT I2C 3.4MHZ 8SOP 集成电路（IC） 存储器