4 K (512 x 8) Bit I2C

DESCRIPTION The MB85RC04 is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC04 is able to retain data without

FeRAM (I2C接口)

4 K (512 x 8) Bit I2C

DESCRIPTION The MB85RC04 is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC04 is able to retain data without

4 K (512 x 8) Bit I2C

DESCRIPTION The MB85RC04 is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC04 is able to retain data without

4 K (512 x 8) Bit I2C

DESCRIPTION The MB85RC04 is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC04 is able to retain data without

4 K (512 x 8) Bit I2C

DESCRIPTION The MB85RC04 is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC04 is able to retain data without

4 K (512 x 8) Bit I2C

 DESCRIPTION The MB85RC04V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC04V is able to retain data wit

4 K (512 x 8) Bit I2C

 DESCRIPTION The MB85RC04V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC04V is able to retain data wit

4 K (512 x 8) Bit I2C

 DESCRIPTION The MB85RC04V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC04V is able to retain data wit

4 K (512 x 8) Bit I2C

 DESCRIPTION The MB85RC04V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC04V is able to retain data wit

4 K (512 x 8) Bit I2C

 DESCRIPTION The MB85RC04V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC04V is able to retain data wit

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：散装 描述：4KBIT FRAM WITH I2C SERIAL INTER 集成电路（IC） 存储器

FeRAM (I2C接口)

4 K (512 횞 8) I2C

文件：307.04 Kbytes Page：29 Pages

4 K (512 횞 8) Bit I2C

文件：317.13 Kbytes Page：29 Pages

4 K (512 횞 8) Bit I2C

文件：317.13 Kbytes Page：29 Pages

4 K (512 횞 8) Bit I2C

文件：317.13 Kbytes Page：29 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：散装 描述：IC FRAM 4KBIT I2C 1MHZ 8SOP 集成电路（IC） 存储器