8 M (512 K × 16) Bit

DESCRIPTIONS The MB85R8M2TA is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R8M2TA is able to retain data without using a back-up bat

FeRAM (并行接口)

8 M (512 K × 16) Bit

DESCRIPTIONS The MB85R8M2TA is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R8M2TA is able to retain data without using a back-up bat

8 M (512 K × 16) Bit

DESCRIPTIONS The MB85R8M2TA is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R8M2TA is able to retain data without using a back-up bat

封装/外壳：48-VFBGA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：8MBIT FRAM (512K X16) PARALLEL I 集成电路（IC） 存储器

封装/外壳：44-TSOP（0.400"，10.16mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：8MBIT FRAM (512K X16) PARALLEL I 集成电路（IC） 存储器