4 M (256 K × 16) Bit

DESCRIPTIONS The MB85R4M2T is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R4M2T is able to retain data without using a back-up bat

FRAM chip consisting of 262,144 words횞16 bits of nonvolatile memory

文件：57.17 Kbytes Page：2 Pages

FeRAM (并行接口)

4 M (256 K × 16) Bit

DESCRIPTIONS The MB85R4M2T is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R4M2T is able to retain data without using a back-up bat

4 M (256 K 횞 16) Bit

文件：720.3 Kbytes Page：23 Pages

FRAM chip consisting of 262,144 words횞16 bits of nonvolatile memory

文件：57.17 Kbytes Page：2 Pages

封装/外壳：44-TSOP（0.400"，10.16mm 宽） 包装：托盘 描述：IC FRAM 4MBIT PARALLEL 44TSOP 集成电路（IC） 存储器

封装/外壳：44-TSOP（0.400"，10.16mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC FRAM 4MBIT 44TSOP 集成电路（IC） 存储器