包装：散装 描述：ACCY MOUNT BMM 3/4 58A RF/IF，射频/中频和 RFID RF 配件

MOS Memories

Description The Fujitsu MB81416 is a fully decoded, dynamic NMOS random access memory organized as 16384 words by 4-bits. The design is optimized for high speed, high performance applications such as mainframe memory, buffer memory, peripheral storage and en- vironments where low power dissipatio

MOS Memories

Description The Fujitsu MB81416 is a fully decoded, dynamic NMOS random access memory organized as 16384 words by 4-bits. The design is optimized for high speed, high performance applications such as mainframe memory, buffer memory, peripheral storage and en- vironments where low power dissipatio

MOS Memories

Description The Fujitsu MB81416 is a fully decoded, dynamic NMOS random access memory organized as 16384 words by 4-bits. The design is optimized for high speed, high performance applications such as mainframe memory, buffer memory, peripheral storage and en- vironments where low power dissipatio

MOS Memories

Description The Fujitsu MB81416 is a fully decoded, dynamic NMOS random access memory organized as 16384 words by 4-bits. The design is optimized for high speed, high performance applications such as mainframe memory, buffer memory, peripheral storage and en- vironments where low power dissipatio

Fast Page Mode Dynamic RAM

Hyper Page Mode Dynamic RAM

MOS 262,144 BIT DYNAMIC RANDOM ACCESS MEMORY

文件：1.09638 Mbytes Page：22 Pages

MOS 262,144 BIT DYNAMIC RANDOM ACCESS MEMORY

文件：1.09638 Mbytes Page：22 Pages

MOS 262,144 BIT DYNAMIC RANDOM ACCESS MEMORY

MOS 262,144 BIT DYNAMIC RANDOM ACCESS MEMORY

文件：1.09638 Mbytes Page：22 Pages

Silicon Epitaxial Planar Dual Capacitance Diode

Features • Silicon Epitaxial Planar Diode • Common cathode • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications     Tuning of separate resonant circuits, push-pull circuits in FM range, especially for car radios

Optocoupler with Phototransistor Output

DESCRIPTION The K814P/K824P/K844P consist of a phototransistor optically coupled to 2 gallium arsenide infrared emitting diodes (reverse polarity) in 4-pin (single); 8 pin (dual) or 16-pin (quad) plastic dual inline package. The elements are mounted on one leadframe providing a fixed distance b

Dual Channel Detector

Two seperate elements, size 1,5x1,5 Individual spectral window for each element Designed for Gas Analysis applications The LHi 814 pyroelectric infrared-detector series is specially designed for gas analysis and monitorring applications. It includes two pyroelectric elements, each ha

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES • Low voltage operation, low phase distortion • Low noise: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Flat-lead 6-pin thin-type ultra super minimold package. • Built-in 2 transistors (2 × 2SC5195)

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES • Low voltage operation, low phase distortion • Low noise: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Flat-lead 6-pin thin-type ultra super minimold package. • Built-in 2 transistors (2 × 2SC5195)