3-Pin Microprocessor Reset Circuits

General Description The MAX803/MAX809/MAX810 are microprocessor (µP) supervisory circuits used to monitor the power supplies in µP and digital systems. They provide excellent circuit reliability and low cost by eliminating external components and adjustments when used with +5V, +3.3V, +3.0V, or +

3-Pin Microprocessor Reset Circuits

General Description The MAX803/MAX809/MAX810 are microprocessor (µP) supervisory circuits used to monitor the power supplies in µP and digital systems. They provide excellent circuit reliability and low cost by eliminating external components and adjustments when used with +5V, +3.3V, +3.0V, or +

Microprocessor Reset Circuit

Features | o High Accurate £2% o Precision VCC Monitoring of +2.5V, +3V, +3.3Vand +5V Supplies | » Power Supply Transient Immunity « Guaranteed Reset Valid to VCC=+1V | o Fully Specified Over Temperature 2pA Supply Current o Available in One Output Configuration: | Open-Drain Acti

封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC SUPERVISOR 1 CHANNEL SC70-3 集成电路（IC） 监控器

封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：IC SUPERVISOR 1 CHANNEL SC70-3 集成电路（IC） 监控器

2 W, 806 to 905 MHz UHF POWER AMPLIFIERS

The RF Line UHF Power Amplifiers Capable of wide power range control as encountered in portable cellular radio applications (30 dB typical). • MHW803–2 806–870 MHz • Specified 7.5 Volt Characteristics RF Input Power = 1 mW (0 dBm) RF Output Power = 2 Watts Minimum Gain (VControl

DARLINGTON POWER TRANSISTORS COMPLEMENTARY

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors