50V, EMI Enhanced, Zero Drift, Ultralow Noise, Rail-to-Rail Output Operational Amplifiers

FEATURES Low offset voltage: 7μV maximum Extremely low offset voltage drift: 30nV/°Cmaximum Low voltage noise density: 5.8nV/√Hz typical 117nV p-p typical from 0.1Hz to 10Hz Low input bias current: 50pA typical Gain-bandwidth product: 2.7MHz Single-supply operation: input voltage ran

50V, EMI Enhanced, Zero Drift, Ultralow Noise, Rail-to-Rail Output Operational Amplifiers

FEATURES Low offset voltage: 7μV maximum Extremely low offset voltage drift: 30nV/°Cmaximum Low voltage noise density: 5.8nV/√Hz typical 117nV p-p typical from 0.1Hz to 10Hz Low input bias current: 50pA typical Gain-bandwidth product: 2.7MHz Single-supply operation: input voltage ran

50V, EMI Enhanced, Zero Drift, Ultralow Noise, Rail-to-Rail Output Operational Amplifiers

FEATURES Low offset voltage: 7μV maximum Extremely low offset voltage drift: 30nV/°Cmaximum Low voltage noise density: 5.8nV/√Hz typical 117nV p-p typical from 0.1Hz to 10Hz Low input bias current: 50pA typical Gain-bandwidth product: 2.7MHz Single-supply operation: input voltage ran

50V, EMI Enhanced, Zero Drift, Ultralow Noise, Rail-to-Rail Output Operational Amplifiers

FEATURES Low offset voltage: 7μV maximum Extremely low offset voltage drift: 30nV/°Cmaximum Low voltage noise density: 5.8nV/√Hz typical 117nV p-p typical from 0.1Hz to 10Hz Low input bias current: 50pA typical Gain-bandwidth product: 2.7MHz Single-supply operation: input voltage ran

LM7481 3-V to 65-V Ideal Diode Controller Driving Back to Back NFETs

1 Features • Qualified for extended temperature applications – Device temperature: –55°C to +125°C ambient operating temperature range • 3-V to 65-V input range • Reverse input protection down to –65 V • Drives external back to back N-channel MOSFETs • Ideal diode operation with 9.1-mV A t

丝印代码：T74810；LM7481 3-V to 65-V Ideal Diode Controller Driving Back to Back NFETs

1 Features • Qualified for extended temperature applications – Device temperature: –55°C to +125°C ambient operating temperature range • 3-V to 65-V input range • Reverse input protection down to –65 V • Drives external back to back N-channel MOSFETs • Ideal diode operation with 9.1-mV A t