封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：SENSOR DIGITAL 0C-125C 8SOIC 传感器，变送器 温度传感器 - 模拟和数字输出

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：SENSOR DIGITAL 0C-125C 8SOIC 传感器，变送器 温度传感器 - 模拟和数字输出

30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features • 54 A, 3

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=54A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =12mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

N-channel Enhancement Mode Power MOSFET

Features  VDS= 30V, ID= 80A RDS(ON)

30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features ● 12 A, 30

System DC Power Supply

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