3ppm/C, Low-Power, Low-Dropout Voltage Reference

General Description The MAX6133 high-precision, low-power, low-dropout voltage reference features a low 3ppm/°C (max) temperature coefficient and a low dropout voltage (200mV, max). This series-mode device features bandgap technology for low-noise performance and excellent accuracy. Load regulati

3ppm/C, Low-Power, Low-Dropout Voltage Reference

General Description The MAX6133 high-precision, low-power, low-dropout voltage reference features a low 3ppm/°C (max) temperature coefficient and a low dropout voltage (200mV, max). This series-mode device features bandgap technology for low-noise performance and excellent accuracy. Load regulati

3ppm/C, Low-Power, Low-Dropout Voltage Reference

General Description The MAX6133 high-precision, low-power, low-dropout voltage reference features a low 3ppm/°C (max) temperature coefficient and a low dropout voltage (200mV, max). This series-mode device features bandgap technology for low-noise performance and excellent accuracy. Load regulati

3ppm/°C、低功耗、低压差电压基准

MAX6133是高精度、低功耗、低压差电压基准，具有3ppm/°C (最大值)的低温度系数和低压差(200mV，最大值)特性。这款串联模式器件采用带隙技术获得低噪声性能和出众的精度。负载调节确保15mA的输出电流。光刻、高稳定度的薄膜电阻以及封装后调理保证其出众的精度(0.04%，最大值)。MAX6133是一款串联电压基准，仅消耗40µA电源电流(且与电源电压基本无关)。与2端并联基准相比，串联模式基准可节省系统功耗，并允许使用更小的外部元件。\nMAX6133采用8引脚µMAX和SO封装。小巧的封装配合出色的精度使这些器件非常适合便携式产品或通信应用。 ·低温度系数\n·3ppm/°C (最大值)，SO封装\n·5ppm/°C (最大值)，µMAX封装\n·5mm x 3mm小巧的µMAX封装\n·200mV低压差\n·40µA静态电流\n·±0.04% (最大值)初始精度\n·16µVP-P低噪声特性(0.1Hz至10Hz) (2.5V输出)\n·15mA输出电流\n·2.7V至12.6V宽电源电压范围\n·出色的输入(30µV/V，最大值)和负载(0.05mV/mA，最大值)调节能力;

3ppm/C, Low-Power, Low-Dropout Voltage Reference

General Description The MAX6133 high-precision, low-power, low-dropout voltage reference features a low 3ppm/°C (max) temperature coefficient and a low dropout voltage (200mV, max). This series-mode device features bandgap technology for low-noise performance and excellent accuracy. Load regulati

3ppm/°C、低功耗、低压差电压基准

MAX6133是高精度、低功耗、低压差电压基准，具有3ppm/°C (最大值)的低温度系数和低压差(200mV，最大值)特性。这款串联模式器件采用带隙技术获得低噪声性能和出众的精度。负载调节确保15mA的输出电流。光刻、高稳定度的薄膜电阻以及封装后调理保证其出众的精度(0.04%，最大值)。MAX6133是一款串联电压基准，仅消耗40µA电源电流(且与电源电压基本无关)。与2端并联基准相比，串联模式基准可节省系统功耗，并允许使用更小的外部元件。\nMAX6133采用8引脚µMAX和SO封装。小巧的封装配合出色的精度使这些器件非常适合便携式产品或通信应用。 ·低温度系数\n·3ppm/°C (最大值)，SO封装\n·5ppm/°C (最大值)，µMAX封装\n·5mm x 3mm小巧的µMAX封装\n·200mV低压差\n·40µA静态电流\n·±0.04% (最大值)初始精度\n·16µVP-P低噪声特性(0.1Hz至10Hz) (2.5V输出)\n·15mA输出电流\n·2.7V至12.6V宽电源电压范围\n·出色的输入(30µV/V，最大值)和负载(0.05mV/mA，最大值)调节能力;

封装/外壳：8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC VREF SERIES 0.06% 8UMAX 集成电路（IC） 电压基准

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC VREF SERIES 0.04% 8SOIC 集成电路（IC） 电压基准

PCS/CDMA 3.5V/29dBm Linear Power Amplifier Module

PRODUCT DESCRIPTION The AWT6133 meets the increasing demands for higher efficiency and linearity in CDMA 1XRTT handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6000 chipset. The device is manufactured on an advanced InGaP HBT MMIC technol

Smart Highside Power Switch

General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection functions. Features • Short circuit protection with latch • C

4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N