Low-Voltage, Silicon RF Power Amplifier/Predriver

General Description The MAX2430 is a versatile, silicon RF power amplifier that operates directly from a 3V to 5.5V supply, making it suitable for 3-cell NiCd or 1-cell lithium-ion battery applications. It is designed for use in the 800MHz to 1000MHz frequency range and, at 915MHz, can produce +2

低电压、硅工艺RF功放前置驱动器

The MAX2430 is a versatile, silicon RF power amplifier that operates directly from a 3V to 5.5V supply, making it suitable for 3-cell NiCd or 1-cell lithium-ion battery applications. It is designed for use in the 800MHz to 1000MHz frequency range and, at 915MHz, can produce +21dBm (125mW) of output \n• Delivers 125mW at 915MHz from +3.6V Supply (100mW typical from +3.0V supply) \n• Over 32dB Power Gain \n• Input Matched to 50Ω (VSWR < 2:1) \n• 1µA Typical Shutdown Current;

Evaluation Kits

文件：125.43 Kbytes Page：6 Pages

SyncE and IEEE 1588

The MAX24305 is an flexible, high-performance timing and clock synthesizer ICs that include a DPLL and two independent APLLs. When locked to one of two input clock signals, the device performs any-to-any frequency conversion. From any input clock frequency 1Hz to 750MHz the device can produce freque Input Clocks\n• Three Differential or CMOS/TTL Inputs\n• Continuous Input Clock Quality Monitoring\n• Hitless Reference Switching on Loss of Input\n• Programmable Bandwidth, 0.5mHz to 400Hz\n• Free-Run or Holdover on Loss of All Inputs\n• Manual Phase Adjustment\n• APLLs Perform High Resolution Frac;

Low-Voltage, Silicon RF Power Amplifier/Predriver

General Description The MAX2430 is a versatile, silicon RF power amplifier that operates directly from a 3V to 5.5V supply, making it suitable for 3-cell NiCd or 1-cell lithium-ion battery applications. It is designed for use in the 800MHz to 1000MHz frequency range and, at 915MHz, can produce +2

Low-Voltage, Silicon RF Power Amplifier/Predriver

General Description The MAX2430 is a versatile, silicon RF power amplifier that operates directly from a 3V to 5.5V supply, making it suitable for 3-cell NiCd or 1-cell lithium-ion battery applications. It is designed for use in the 800MHz to 1000MHz frequency range and, at 915MHz, can produce +2

Evaluation Kits

文件：125.43 Kbytes Page：6 Pages

包装：卷带（TR） 描述：IC CLK SYNTHESIZER 5OUT 81CSBGA 集成电路（IC） 应用特定时钟/定时

Evaluation Kits

文件：125.43 Kbytes Page：6 Pages

Evaluation Kits

文件：125.43 Kbytes Page：6 Pages

256-Bit 1-Wire EEPROM

DESCRIPTION The DS2430A 256-bit 1-Wire EEPROM identifies and stores relevant information about the product to which it is associated. This lot or product specific information can be accessed with minimal interface, for example a single port pin of a microcontroller. The DS2430A consists of a fact

256-Bit 1-Wire EEPROM

DESCRIPTION The DS2430A 256-bit 1-Wire EEPROM identifies and stores relevant information about the product to which it is associated. This lot or product specific information can be accessed with minimal interface, for example a single port pin of a microcontroller. The DS2430A consists of a fact

20 MBd High CMR Logic Gate Optocouplers

Description The HCPL-2400 and HCPL-2430 high speed optocouplers combine an 820 nm AlGaAs light emitting diode with a high speed photodetector. This combination results in very high data rate capability and low input current. The totem pole output (HCPL-2430) or three state output (HCPL-2400)

Power Switching Regulators

MA4000 Series / Shindengen Electric Mfg.Co.Ltd

MICROWAVE POWER GaAs FET?

DESCRIPTION The MGF2430A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. APPLICATION S to Ku band power amplifiers.