Low-Voltage, Silicon RF Power Amplifier/Predriver

General Description The MAX2430 is a versatile, silicon RF power amplifier that operates directly from a 3V to 5.5V supply, making it suitable for 3-cell NiCd or 1-cell lithium-ion battery applications. It is designed for use in the 800MHz to 1000MHz frequency range and, at 915MHz, can produce +2

256-Bit 1-Wire EEPROM

DESCRIPTION The DS2430A 256-bit 1-Wire EEPROM identifies and stores relevant information about the product to which it is associated. This lot or product specific information can be accessed with minimal interface, for example a single port pin of a microcontroller. The DS2430A consists of a fact

256-Bit 1-Wire EEPROM

DESCRIPTION The DS2430A 256-bit 1-Wire EEPROM identifies and stores relevant information about the product to which it is associated. This lot or product specific information can be accessed with minimal interface, for example a single port pin of a microcontroller. The DS2430A consists of a fact

20 MBd High CMR Logic Gate Optocouplers

Description The HCPL-2400 and HCPL-2430 high speed optocouplers combine an 820 nm AlGaAs light emitting diode with a high speed photodetector. This combination results in very high data rate capability and low input current. The totem pole output (HCPL-2430) or three state output (HCPL-2400)

Power Switching Regulators

MA4000 Series / Shindengen Electric Mfg.Co.Ltd

MICROWAVE POWER GaAs FET?

DESCRIPTION The MGF2430A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. APPLICATION S to Ku band power amplifiers.