丝印代码：MAX213C；5-V MULTICHANNEL RS-232 LINE DRIVER/RECEIVER WITH ±15-kV ESD PROTECTION

FEATURES · ESD Protection for RS-232 Bus Pins – ±15-kV Human-Body Model (HBM) · Meets or Exceeds the Requirements of TIA/EIA-232-F and ITU v.28 Standards · Operates at 5-V VCC Supply · Four Drivers and Five Receivers · Operates up to 120 kbit/s · Low Supply Current in Shutdown Mode . . .

封装/外壳：28-SOIC（0.295"，7.50mm 宽） 包装：管件 描述：IC TRANSCEIVER FULL 4/5 28SOIC 集成电路（IC） 驱动器，接收器，收发器

5-V MULTICHANNEL RS-232 LINE DRIVER/RECEIVER WITH 짹15-kV ESD PROTECTION

文件：224.39 Kbytes Page：14 Pages

丝印代码：MAX213C；5-V MULTICHANNEL RS-232 LINE DRIVER/RECEIVER WITH ±15-kV ESD PROTECTION

FEATURES · ESD Protection for RS-232 Bus Pins – ±15-kV Human-Body Model (HBM) · Meets or Exceeds the Requirements of TIA/EIA-232-F and ITU v.28 Standards · Operates at 5-V VCC Supply · Four Drivers and Five Receivers · Operates up to 120 kbit/s · Low Supply Current in Shutdown Mode . . .

丝印代码：MAX213C；5-V MULTICHANNEL RS-232 LINE DRIVER/RECEIVER WITH ±15-kV ESD PROTECTION

FEATURES · ESD Protection for RS-232 Bus Pins – ±15-kV Human-Body Model (HBM) · Meets or Exceeds the Requirements of TIA/EIA-232-F and ITU v.28 Standards · Operates at 5-V VCC Supply · Four Drivers and Five Receivers · Operates up to 120 kbit/s · Low Supply Current in Shutdown Mode . . .

丝印代码：MAX213C；5-V MULTICHANNEL RS-232 LINE DRIVER/RECEIVER WITH ±15-kV ESD PROTECTION

FEATURES · ESD Protection for RS-232 Bus Pins – ±15-kV Human-Body Model (HBM) · Meets or Exceeds the Requirements of TIA/EIA-232-F and ITU v.28 Standards · Operates at 5-V VCC Supply · Four Drivers and Five Receivers · Operates up to 120 kbit/s · Low Supply Current in Shutdown Mode . . .

封装/外壳：28-SOIC（0.295"，7.50mm 宽） 包装：托盘 描述：IC TRANSCEIVER FULL 4/5 28SOIC 集成电路（IC） 驱动器，接收器，收发器

5-V MULTICHANNEL RS-232 LINE DRIVER/RECEIVER WITH 짹15-kV ESD PROTECTION

文件：224.39 Kbytes Page：14 Pages

Amlifier Transistors (PNP)

Amplifier Transistors PNP Silicon

丝印代码：D213；DUAL CHANNEL SMALL OUTLINE OPTOISOLATOR TRANSISTOR OUTPUT

This device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. It is ideally suited for high density applications and eliminates the need for through–the–board moun

Germanium PNP Transistor High Power, High Gain Amplifier

Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment.

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

1024- 횞 512-pixel ccd image sensor

文件：325.65 Kbytes Page：21 Pages