封装/外壳：32-WFQFN 裸露焊盘 功能：高增益矢量倍频器 包装：卷带（TR） 描述：IC MULT HI GAIN VECTOR 32-TQFN RF/IF，射频/中频和 RFID RF 其它 IC 和模块

封装/外壳：32-WFQFN 裸露焊盘 功能：高增益矢量倍频器 包装：卷带（TR） 描述：IC MULT HI GAIN VECTOR 32-TQFN RF/IF，射频/中频和 RFID RF 其它 IC 和模块

UHF power transistor

DESCRIPTION NPN silicon planar transistor in a 2-lead SOT460A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output match

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

DUAL CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES

文件：410.8 Kbytes Page：23 Pages

4-PORT HUB FOR THE UNIVERSAL SERIAL BUS WITH OPTIONAL SERIAL EEPROM INTERFACE

文件：323.94 Kbytes Page：21 Pages

4-PORT HUB FOR THE UNIVERSAL SERIAL BUS WITH OPTIONAL SERIAL EEPROM INTERFACE

文件：230.97 Kbytes Page：16 Pages