Thin Film Attenuator Pads

MACOM attenuator chips are fabricated using our state of the art thin film metallization and advanced photolithography technology. All devices are available in chip form with a metalized ground connection on the back. This ground is wrapped around on the four corners of the chip so additional ground ·RoHS\n·DC to 40 GHz\n·Medium Power Handling 2W CW\n·Flat Response From DC to 40 GHz\n·Return Loss > 18 dB DC to 12 GHz\n·Return Loss > 16 dB 13 to 40 GHz\n·Space Saving Footprint .030” X .030” (762 X .762mm)\n·Very Good Stability Over Temperature (TCR < 100 PPM)\n·Ground Wrap to Top (No ground bond;

封装/外壳：模具 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF ATTENUATOR 2DB DIE RF/IF，射频/中频和 RFID 衰减器

Attenuator DIE

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NPN SILICON POWER DARLINGTON TRANSISTORS

SWITCHMODE™ Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated

POWER TRANSISTORS(60A,200-250V,250W)

60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS

SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated

100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts

Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency

125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

Description The PTF 10020 is an internally matched, 125 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. • INTERNALLY MATCHED • Performance at 960 MHz, 28 Vol