High power density 600V Half bridge driver with two enhancement mode GaN HEMT

Features • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors in asymmetrical configuration: – QFN 9 x 9 x 1 mm package – RDS(ON) = 150 mΩ (LS) + 225 mΩ (HS) – IDS(MAX) = 10 A (LS) + 6.5 A (HS) • Reverse current capability • Zero reverse recov

封装/外壳：31-VQFN 裸露焊盘 包装：管件 描述：HIGH PWR DENS GAN 600V HALF BRI 集成电路（IC） 电源管理 - 专用

High power density 600V Half bridge driver with two enhancement mode GaN HEMT

Features • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors in asymmetrical configuration: – QFN 9 x 9 x 1 mm package – RDS(ON) = 150 mΩ (LS) + 225 mΩ (HS) – IDS(MAX) = 10 A (LS) + 6.5 A (HS) • Reverse current capability • Zero reverse recov