High power density 600V Half bridge driver with two enhancement mode GaN HEMT

Features • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors: – QFN 9 x 9 x 1 mm package – RDS(ON) = 150 mΩ – IDS(MAX) = 10 A • Reverse current capability • Zero reverse recovery loss • UVLO protection on low-side and high-side • Internal b

封装/外壳：31-VQFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：HIGH-DENSITY POWER DRIVER - HIGH 集成电路（IC） 电源管理 - 专用

High power density 600V half-bridge driver with two enhancement mode GaN HEMTs

High power density 600V Half bridge driver with two enhancement mode GaN HEMT

Features • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors: – QFN 9 x 9 x 1 mm package – RDS(ON) = 150 mΩ – IDS(MAX) = 10 A • Reverse current capability • Zero reverse recovery loss • UVLO protection on low-side and high-side • Internal b

带有高压驱动器的600 V半桥增强模式GaN HEMT