LDMOS RF Line Power FET Transistor 15 W , 800-1700 MHz, 26V

Designed for broadband commercial applications up to 1.7GHz • High gain, high efficiency and high linearity • Aluminum-Copper Metallization for high reliability • RoHS Compliant • Typical P1dB performance at 960MHz, 26Vdc, CW Typical power output: 16.5W Gain: 17.0dB Efficiency:

LDMOS RF Line Power FET Transistor 15 W , 800-1700 MHz, 26V

RF Power Field Effect Transistor LDMOS, 800-1700 MHz, 15W, 26V

Features • Designed for broadband commercial applications up to 1.7GHz • High Gain, High Efficiency and High Linearity • Typical P1dB performance at 960MHz, 26Vdc, CW • Typical Power Output: 16.5W • Gain: 17.0dB • Efficiency: 50 • 10:1 VSWR Ruggedness at 15W, 26Vdc, 960MHz