位置：首页 > IC中文资料 > MAP80N03NF
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 |   | ||
N-Channel Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Description: The ADM80N03Z uses advanced trench technology and design to provide excellent RDS(ON) with l | ADV 爱德微 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.00146 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
Fast Switching Characteristic 文件：82.72 Kbytes Page：7 Pages | A-POWER 富鼎先进电子 | | ||
Fast Switching Characteristic 文件：82.72 Kbytes Page：7 Pages | A-POWER 富鼎先进电子 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
34 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
- |
25+ |
DDPAK-14 |
65428 |
百分百原装现货 实单必成 |
|||
VBsemi |
21+ |
TO252 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VBsemi/台湾微碧 |
21+ |
PG-TO220-3-1 |
31025 |
原装现货假一赔十 |
|||
INFINEON/英飞凌 |
2450+ |
TO263 |
6540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
SIEMENS |
00+ |
ZIP-3 |
6 |
原装现货海量库存欢迎咨询 |
|||
INFINEON/英飞凌 |
23+ |
TO263 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
2001 |
DDPAK-14 |
6000 |
绝对原装自己现货 |
||||
25+23+ |
DDPAK-14 |
8648 |
绝对原装正品全新进口深圳现货 |
||||
Infineon |
24+ |
TO-263 |
25843 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
MAP80N03NF规格书下载地址
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2020-3-9
DdatasheetPDF页码索引
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