SMALL SIGNAL SCHOTTKY DIODES

FEATURES • Low forward voltage drop • Satisfactory wave detection efficiency • Small temperature coefficient of forward characteristics • Extremely low reverse current • These products are ideal for use in ordinary wave detection and super high speed switching circuits • High temperature sol

Silicon epitaxial planar type

Silicon epitaxial planar type For wave detection For super high speed switching ■Features •Low forward voltage VF and good wave detection efficiency η •Small temperature coefficient of forward characteristic •Small reverse current IR •High-density mounting (5 mm pitch i

SMALL SIGNAL SCHOTTKY DIODES

FEATURES ◇ Low forward voltage drop ◇ Satisfactory wave detection efficiency ◇ Extremely low reverse current IR ◇ Small temperature coefficient of forward characteristics ◇ Extremely low reverse current These products are ideal for use in ordinary wave detection and super high speed swit

SILICON EPITAXIAL PLANAR TYPE SCHOTTKY BARRIER DIODES

SILICON EPITAXIAL PLANAR TYPE SCHOTTKY BARRIER DIODES for ordinary wave detection for super high speed switching Features • Low forward rise voltage (VF) and satisfactory wave detection efficiency (η) • Small temperature coefficient of forward characteristic • Extremely low reverse current (

SCHOTTKY BARRIER DIODES

FEATURES : * Low forward voltage VF * Small temperature coefficent of forward characterisble * Small reverse current IR * High-densitty mounting ( 5mm pich insertion) is possible * Pb / RoHS Free

Small Signal Schottky Diodes

Features ◇ Low forward voltage drop ◇ Satisfactory wave detection efficiency ◇ Extremely low reverse current IR ◇ Small temperature coefficient of forward characteristics ◇ Extremely low reverse current These products are ideal for use in ordinary wave detection and super high speed swit

Nominal 6K/30K 廓at 77째F (25째C)

The MA700 Series of reusable temperature probes is ideally suited for the critical sensing parameters in continuous monitoring of a patient’s body temperature. The MA700 Series may be used with thermometers and other instruments designed to accept a resistance input of nominal 6K/30K Ω at 77°F (25

Radiation Hard 512x9 Bit FIFO

The MA7001 512 x 9 FIFO is manufactured using Dynex Semiconductors CMOS-SOS high performance, radiation hard, 3µm technology. The Dynex Semiconductor Silicon-on-Sapphire process provides significant advantages over bulk silicon substrate technologies In addition to very good total dose hardness a

MicroPower, Ultra-sensitive Hall Effect Switch

GENERAL DESCRIPTION MA7001 is a three-terminal Hall Effect sensor device with an output driver, mainly designed for battery–operation, hand-held equipment (such as Cellular and Cordless Phone, PDA). The output is switch with either north or South Pole of sufficient strength will turn the outp

MicroPower, Ultra-sensitive Hall Effect Switch

GENERAL DESCRIPTION MA7001 is a three-terminal Hall Effect sensor device with an output driver, mainly designed for battery–operation, hand-held equipment (such as Cellular and Cordless Phone, PDA). The output is switch with either north or South Pole of sufficient strength will turn the outp

MicroPower, Ultra-sensitive Hall Effect Switch

GENERAL DESCRIPTION MA7001 is a three-terminal Hall Effect sensor device with an output driver, mainly designed for battery–operation, hand-held equipment (such as Cellular and Cordless Phone, PDA). The output is switch with either north or South Pole of sufficient strength will turn the outp

MicroPower, Ultra-sensitive Hall Effect Switch

GENERAL DESCRIPTION MA7001E is a three-terminal Hall Effect sensor device with an output driver, mainly designed for battery–operation, hand-held equipment (such as Cellular and Cordless Phone, PDA). The output is switch with either north or South Pole of sufficient strength will turn the out

MicroPower, Ultra-sensitive Hall Effect Switch

GENERAL DESCRIPTION MA7001E is a three-terminal Hall Effect sensor device with an output driver, mainly designed for battery–operation, hand-held equipment (such as Cellular and Cordless Phone, PDA). The output is switch with either north or South Pole of sufficient strength will turn the out

MicroPower, Ultra-sensitive Hall Effect Switch

GENERAL DESCRIPTION MA7001 is a three-terminal Hall Effect sensor device with an output driver, mainly designed for battery–operation, hand-held equipment (such as Cellular and Cordless Phone, PDA). The output is switch with either north or South Pole of sufficient strength will turn the outp

Ultra-sensitive Hall Effect Switch

GENERAL DESCRIPTION MA7002 is a three-terminal Hall effect sensor device with an output driver. The device is using CMOS process includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and a Schmitt trigger to provide switching hysteresis

Ultra-sensitive Hall Effect Switch

GENERAL DESCRIPTION MA7002 is a three-terminal Hall effect sensor device with an output driver. The device is using CMOS process includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and a Schmitt trigger to provide switching hysteresis

Ultra-sensitive Hall Effect Switch

GENERAL DESCRIPTION MA7002 is a three-terminal Hall effect sensor device with an output driver. The device is using CMOS process includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and a Schmitt trigger to provide switching hysteresis

Ultra-sensitive Hall Effect Switch

GENERAL DESCRIPTION MA7002 is a three-terminal Hall effect sensor device with an output driver. The device is using CMOS process includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and a Schmitt trigger to provide switching hysteresis

MicroPower, Ultra-sensitive Hall Effect Switch

GENERAL DESCRIPTION MA7003 is a three-terminal Hall Effect sensor device with an output driver. The device is using CMOS process includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and a Schmitt trigger to provide switching hysteresis

MicroPower, Ultra-sensitive Hall Effect Switch

GENERAL DESCRIPTION MA7003 is a three-terminal Hall Effect sensor device with an output driver. The device is using CMOS process includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and a Schmitt trigger to provide switching hysteresis

MicroPower, Ultra-sensitive Hall Effect Switch

GENERAL DESCRIPTION MA7003 is a three-terminal Hall Effect sensor device with an output driver. The device is using CMOS process includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and a Schmitt trigger to provide switching hysteresis

MicroPower, Ultra-sensitive Hall Effect Switch

GENERAL DESCRIPTION MA7003 is a three-terminal Hall Effect sensor device with an output driver. The device is using CMOS process includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and a Schmitt trigger to provide switching hysteresis

MicroPower, Ultra-sensitive Hall Effect Switch

GENERAL DESCRIPTION MA7004 is a three-terminal Hall Effect sensor device with an output driver, mainly designed for battery–operation, hand-held equipment (such as Cellular and Cordless Phone, PDA). The output is switch with either north or South Pole of sufficient strength will turn the outp

MicroPower, Ultra-sensitive Hall Effect Switch

GENERAL DESCRIPTION MA7004 is a three-terminal Hall Effect sensor device with an output driver, mainly designed for battery–operation, hand-held equipment (such as Cellular and Cordless Phone, PDA). The output is switch with either north or South Pole of sufficient strength will turn the outp

MicroPower, Ultra-sensitive Hall Effect Switch

GENERAL DESCRIPTION MA7006 is a three-terminal Hall Effect sensor device with an output driver. The device is using CMOS process includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and a Schmitt trigger to provide switching hysteresis

MicroPower, Ultra-sensitive Hall Effect Switch

GENERAL DESCRIPTION MA7006 is a three-terminal Hall Effect sensor device with an output driver. The device is using CMOS process includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and a Schmitt trigger to provide switching hysteresis

MicroPower, Ultra-sensitive Hall Effect Switch

GENERAL DESCRIPTION MA7007 is a three-terminal Hall Effect sensor device with an output driver, mainly designed for battery–operation, hand-held equipment (such as Cellular and Cordless Phone, PDA). The output is switch with either north or South Pole of sufficient strength will turn the outp

MicroPower, Ultra-sensitive Hall Effect Switch

GENERAL DESCRIPTION MA7007 is a three-terminal Hall Effect sensor device with an output driver, mainly designed for battery–operation, hand-held equipment (such as Cellular and Cordless Phone, PDA). The output is switch with either north or South Pole of sufficient strength will turn the outp

MicroPower, Ultra-sensitive Hall Effect Switch

GENERAL DESCRIPTION MA7007 is a three-terminal Hall Effect sensor device with an output driver, mainly designed for battery–operation, hand-held equipment (such as Cellular and Cordless Phone, PDA). The output is switch with either north or South Pole of sufficient strength will turn the outp

MicroPower, Unipolar Hall Effect Switch

GENERAL DESCRIPTION MA7008 is a three-terminal Hall Effect sensor device with an output driver, mainly designed for battery–operation, hand-held equipment (such as Cellular and Cordless Phone, PDA). The MA7008 is an unipolar Hall effect sensor IC. If a magnetic flux density larger than thresh

MicroPower, Unipolar Hall Effect Switch

GENERAL DESCRIPTION MA7008 is a three-terminal Hall Effect sensor device with an output driver, mainly designed for battery–operation, hand-held equipment (such as Cellular and Cordless Phone, PDA). The MA7008 is an unipolar Hall effect sensor IC. If a magnetic flux density larger than thresh

MicroPower, Unipolar Hall Effect Switch

GENERAL DESCRIPTION MA7008 is a three-terminal Hall Effect sensor device with an output driver, mainly designed for battery–operation, hand-held equipment (such as Cellular and Cordless Phone, PDA). The MA7008 is an unipolar Hall effect sensor IC. If a magnetic flux density larger than thresh

MicroPower, Unipolar Hall Effect Switch

GENERAL DESCRIPTION MA7008 is a three-terminal Hall Effect sensor device with an output driver, mainly designed for battery–operation, hand-held equipment (such as Cellular and Cordless Phone, PDA). The MA7008 is an unipolar Hall effect sensor IC. If a magnetic flux density larger than thresh

Silicon epitaxial planar type

Silicon epitaxial planar type For wave detection For super high speed switching ■Features •Low forward voltage VF and good wave detection efficiency η •Small temperature coefficient of forward characteristic •Small reverse current IR •High-density mounting (5 mm pitch i

SMALL SIGNAL SCHOTTKY DIODES

FEATURES ◇ Low forward voltage drop ◇ Satisfory wave detection efficiency ◇ Extremely low reverse current IR ◇ Small temperature coefficient of forward characteristics ◇ Extremely low reverse current These products are ideal for use in ordinary wave detection and super high speed switchi

SILICON EPITAXIAL PLANAR TYPE SCHOTTKY BARRIER DIODES

SILICON EPITAXIAL PLANAR TYPE SCHOTTKY BARRIER DIODES for ordinary wave detection for super high speed switching Features • Low forward rise voltage (VF) and satisfactory wave detection efficiency (η) • Small temperature coefficient of forward characteristic • Extremely low reverse current (

SCHOTTKY BARRIER DIODES

FEATURES : * Low forward voltage VF * Small temperature coefficent of forward characterisble * Small reverse current IR * High-densitty mounting ( 5mm pich insertion) is possible * Pb / RoHS Free

Schottky barrier diode Glass silicon switching diodes

Schottky barrier diode • 300mW DO-34 • Glass silicon switching diodes • We declare that the material of product compliance with RoHS requirements.

Small Signal Schottky Diodes

Features ◇ Low forward voltage drop ◇ Satisfory wave detection efficiency ◇ Extremely low reverse current IR ◇ Small temperature coefficient of forward characteristics ◇ Extremely low reverse current These products are ideal for use in ordinary wave detection and super high speed switchi

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • Low forward voltage drop • Satisfactory wave detection efficiency • Small temperature coefficient of forward characteristics • Extremely low reverse current • These products are ideal for use in ordinary wave detection and super high speed switching circuits • High temperature sol

SILICON SCHOTTKY BARRIER DIODE

SILICON SCHOTTKY BARRIER DIODE

Unipolar Hall Effect Switch

GENERAL DESCRIPTION MA7014 is a unipolar Hall-effect sensor IC. The device includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and a Schmitt trigger to provide switching hysteresis for noise rejection, and open-drain output. An internal

Unipolar Hall Effect Switch

GENERAL DESCRIPTION MA7014 is a unipolar Hall-effect sensor IC. The device includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and a Schmitt trigger to provide switching hysteresis for noise rejection, and open-drain output. An internal

Unipolar Hall Effect Switch

GENERAL DESCRIPTION MA7014 is a unipolar Hall-effect sensor IC. The device includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and a Schmitt trigger to provide switching hysteresis for noise rejection, and open-drain output. An internal

Hall Effect Switch

GENERAL DESCRIPTION MA7015 is a Hall effect sensor IC. The device includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and a Schmitt trigger to provide switching hysteresis for noise rejection, and open-drain output. An internal band-gap

Hall Effect Switch

GENERAL DESCRIPTION MA7015 is a Hall effect sensor IC. The device includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and a Schmitt trigger to provide switching hysteresis for noise rejection, and open-drain output. An internal band-gap

Hall Effect Switch

GENERAL DESCRIPTION MA7015 is a Hall effect sensor IC. The device includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and a Schmitt trigger to provide switching hysteresis for noise rejection, and open-drain output. An internal band-gap

Hall Effect Switch

GENERAL DESCRIPTION MA7016 is a Hall effect sensor IC. The device includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and a Schmitt trigger to provide switching hysteresis for noise rejection, and open-drain output. An internal band-gap

Single Output Hall Effect Latch

GENERAL DESCRIPTION MA7024 is an integrated Hall-Effect latch sensor with pull-up resistor designed for electronic commutation of brush-less DC motor applications. The device is using HV BCD process includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies th

Single Output Hall Effect Latch

GENERAL DESCRIPTION MA7024 is an integrated Hall-Effect latch sensor with pull-up resistor designed for electronic commutation of brush-less DC motor applications. The device is using HV BCD process includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies th

Single Output Hall Effect Latch

GENERAL DESCRIPTION MA7024 is an integrated Hall-Effect latch sensor with pull-up resistor designed for electronic commutation of brush-less DC motor applications. The device is using HV BCD process includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies th

Single Output Hall Effect Latch

GENERAL DESCRIPTION MA7025 is an integrated Hall effect latched sensor designed for electronic commutation of brush-less DC motor applications. The device is using HV BCD process includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and

Single Output Hall Effect Latch

GENERAL DESCRIPTION MA7025 is an integrated Hall effect latched sensor designed for electronic commutation of brush-less DC motor applications. The device is using HV BCD process includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and

Single Output Hall Effect Latch

GENERAL DESCRIPTION MA7025 is an integrated Hall effect latched sensor designed for electronic commutation of brush-less DC motor applications. The device is using HV BCD process includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and

Single Output Hall Effect Latch

GENERAL DESCRIPTION MA7025 is an integrated Hall effect latched sensor designed for electronic commutation of brush-less DC motor applications. The device is using HV BCD process includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and

Single Output Hall Effect Latch

GENERAL DESCRIPTION MA7026 is an integrated Hall effect latched sensor designed for electronic commutation of brush-less DC motor applications. The device is using HV BCD process includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and

Single Output Hall Effect Latch

GENERAL DESCRIPTION MA7026 is an integrated Hall effect latched sensor designed for electronic commutation of brush-less DC motor applications. The device is using HV BCD process includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and

Single Output Hall Effect Latch

GENERAL DESCRIPTION MA7026 is an integrated Hall effect latched sensor designed for electronic commutation of brush-less DC motor applications. The device is using HV BCD process includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and

Single Output Hall Effect Latch

GENERAL DESCRIPTION MA7026 is an integrated Hall effect latched sensor designed for electronic commutation of brush-less DC motor applications. The device is using HV BCD process includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and

MicroPower, Unipolar Hall Effect Switch

GENERAL DESCRIPTION MA7030N is a three-terminal Hall Effect sensor device with an output driver, mainly designed for battery–operation, hand-held equipment (such as Cellular and Cordless Phone, PDA). The MA7030N is a unipolar Hall effect sensor IC. If a magnetic flux density larger than thres