| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MA4E2514L | SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Description The MA4E2514 SURMOUNTTM Diode Tee Series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC Circuits consist of Silicon pedestals which form diodes or via conductors embedded in glass dielect | MA-COM |   | |
MA4E2514L | SURMOUNT Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Description The MA4E2514 SurMountTM Diode Tee series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele | MACOM | | |
SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Description The MA4E2514 SURMOUNTTM Diode Tee Series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC Circuits consist of Silicon pedestals which form diodes or via conductors embedded in glass dielect | MA-COM | | ||
SURMOUNT Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Description The MA4E2514 SurMountTM Diode Tee series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele | MACOM | | ||
Low Barrier Series Tee Si The MA4E2514 SURMOUNTTM Diode Tee Series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC™) process. HMIC™ Circuits consist of Silicon pedestals which form diodes or via conductors embedded in glass dielectric, which ac ·Extremely Low Parasitic Capitance and Inductance\n·Lower Susceptibility to ESD Damage\n·Reliable, Multilayer Metalization with a Diffusion Barrier, 100 % Stabilization Bake (300°C, 16 hours)\n·Rugged HMIC™ Construction with Polyimide Scratch Protection\n·Surface Mountable in Microwave Circuits,; | MACOM | | ||
SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Description The MA4E2514 SURMOUNTTM Diode Tee Series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC Circuits consist of Silicon pedestals which form diodes or via conductors embedded in glass dielect | MA-COM | | ||
SURMOUNT Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Description The MA4E2514 SurMountTM Diode Tee series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele | MACOM | | ||
SURMOUNT Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Description The MA4E2514 SurMountTM Diode Tee series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele | MACOM | | ||
SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Description The MA4E2514 SURMOUNTTM Diode Tee Series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC Circuits consist of Silicon pedestals which form diodes or via conductors embedded in glass dielect | MA-COM | | ||
封装/外壳：模具 包装：托盘 描述：HMIC SURMOUNT SCHOTTKY TEE 分立半导体产品 二极管 - 射频 | ETC 知名厂家 | ETC | | |
SURMOUNT Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Description The MA4E2514 SurMountTM Diode Tee series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele | MACOM | | ||
SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Description The MA4E2514 SURMOUNTTM Diode Tee Series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC Circuits consist of Silicon pedestals which form diodes or via conductors embedded in glass dielect | MA-COM | | ||
SURMOUNT Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Description The MA4E2514 SurMountTM Diode Tee series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele | MACOM | |
MA4E2514L产品属性
- 类型
描述
- Vf(V)：
0.3300
- Vb：
3.00
- Total Capacitance(pF)：
0.120
- Dynamic Resistance(ohms)：
16.0
- Junction Capacitance(pF)：
0.120
- Package Category：
Surface Mount Die
- Package：
ODS-1116
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MACOM(镁可) |
26+ |
- |
16000 |
原装认证库存更多原厂可发 |
|||
M/A-COM |
23+ |
NA |
15000 |
MA4E2514L-1116原装现货!香港大量现货可含税! |
|||
26+ |
N/A |
51000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
M/A-COM |
2308+ |
原装正品 |
4285 |
十年专业专注 优势渠道商正品保证 |
|||
MACOM |
26+ |
NA |
10501 |
射频元件二极管-正纳电子/ 原材料及元器件 |
|||
M/A-COM |
22+ |
NA |
1000 |
只做原装,价格优惠,长期供货。 |
|||
MACOM |
21+ |
标准封装 |
1452 |
专营优势订货渠道! |
|||
M/A-COM |
23+ |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
M/A-COM |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
25+ |
SOT6.M |
3629 |
原装优势!房间现货!欢迎来电! |
MA4E2514L规格书下载地址
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