| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MA4E2514 | SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Description The MA4E2514 SURMOUNTTM Diode Tee Series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC Circuits consist of Silicon pedestals which form diodes or via conductors embedded in glass dielect | MA-COM | ||
MA4E2514 | SURMOUNT Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Description The MA4E2514 SurMountTM Diode Tee series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele | MACOM | ||
SURMOUNT Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Description The MA4E2514 SurMountTM Diode Tee series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele | MACOM | |||
SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Description The MA4E2514 SURMOUNTTM Diode Tee Series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC Circuits consist of Silicon pedestals which form diodes or via conductors embedded in glass dielect | MA-COM | |||
SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Description The MA4E2514 SURMOUNTTM Diode Tee Series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC Circuits consist of Silicon pedestals which form diodes or via conductors embedded in glass dielect | MA-COM | |||
SURMOUNT Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Description The MA4E2514 SurMountTM Diode Tee series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele | MACOM | |||
Low Barrier Series Tee Si The MA4E2514 SURMOUNTTM Diode Tee Series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC™) process. HMIC™ Circuits consist of Silicon pedestals which form diodes or via conductors embedded in glass dielectric, which ac ·Extremely Low Parasitic Capitance and Inductance\n·Lower Susceptibility to ESD Damage\n·Reliable, Multilayer Metalization with a Diffusion Barrier, 100 % Stabilization Bake (300°C, 16 hours)\n·Rugged HMIC™ Construction with Polyimide Scratch Protection\n·Surface Mountable in Microwave Circuits,; | MACOM | |||
SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Description The MA4E2514 SURMOUNTTM Diode Tee Series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC Circuits consist of Silicon pedestals which form diodes or via conductors embedded in glass dielect | MA-COM | |||
SURMOUNT Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Description The MA4E2514 SurMountTM Diode Tee series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele | MACOM | |||
SURMOUNT Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Description The MA4E2514 SurMountTM Diode Tee series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele | MACOM | |||
SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Description The MA4E2514 SURMOUNTTM Diode Tee Series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC Circuits consist of Silicon pedestals which form diodes or via conductors embedded in glass dielect | MA-COM | |||
SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Description The MA4E2514 SURMOUNTTM Diode Tee Series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC Circuits consist of Silicon pedestals which form diodes or via conductors embedded in glass dielect | MA-COM | |||
SURMOUNT Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Description The MA4E2514 SurMountTM Diode Tee series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele | MACOM | |||
SURMOUNT Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Description The MA4E2514 SurMountTM Diode Tee series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele | MACOM | |||
SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Description The MA4E2514 SURMOUNTTM Diode Tee Series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC Circuits consist of Silicon pedestals which form diodes or via conductors embedded in glass dielect | MA-COM | |||
Med. Barrier Series Tee Si The MA4E2514 SURMOUNTTM Diode Tee Series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC™) process. HMIC™ Circuits consist of Silicon pedestals which form diodes or via conductors embedded in glass dielectric, which ac ·Extremely Low Parasitic Capitance and Inductance\n·Lower Susceptibility to ESD Damage\n·Reliable, Multilayer Metalization with a Diffusion Barrier, 100 % Stabilization Bake (300°C, 16 hours)\n·Rugged HMIC™ Construction with Polyimide Scratch Protection\n·Surface Mountable in Microwave Circuits,; | MACOM | |||
SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Description The MA4E2514 SURMOUNTTM Diode Tee Series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC Circuits consist of Silicon pedestals which form diodes or via conductors embedded in glass dielect | MA-COM | |||
SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Description The MA4E2514 SURMOUNTTM Diode Tee Series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC Circuits consist of Silicon pedestals which form diodes or via conductors embedded in glass dielect | MA-COM | |||
SURMOUNT Low and Medium Barrier Silicon Schottky Diodes: Tee Pair Description The MA4E2514 SurMountTM Diode Tee series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele | MACOM | |||
封装/外壳:模具 包装:托盘 描述:HMIC SURMOUNT SCHOTTKY TEE 分立半导体产品 二极管 - 射频 | ETC 知名厂家 | ETC | ||
封装/外壳:模具 包装:托盘 描述:HMIC SURMOUNT SCHOTTKY TEE MEDIU 分立半导体产品 二极管 - 射频 | ETC 知名厂家 | ETC |
MA4E2514产品属性
- 类型
描述
- Vf(V):
0.3300
- Vb:
3.00
- Total Capacitance(pF):
0.120
- Dynamic Resistance(ohms):
16.0
- Junction Capacitance(pF):
0.120
- Package Category:
Surface Mount Die
- Package:
ODS-1116
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MACOM |
25+ |
SMD |
10065 |
原装正品,有挂有货,假一赔十 |
|||
MACOM |
2025+ |
N/A |
5000 |
原装进口价格优 请找坤融电子! |
|||
M/A-COM |
23+ |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
26+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
M/A-COM |
2308+ |
原装正品 |
4285 |
十年专业专注 优势渠道商正品保证 |
|||
M/A-COM |
2447 |
20 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
M/A-COM |
23+ |
NA |
15000 |
MA4E2514L-1116原装现货!香港大量现货可含税! |
|||
MACOM |
最新 |
原装 |
9850 |
全新原装现货假一罚十 |
|||
MACOM |
25+ |
SMD |
50649 |
||||
M/A-COM |
22+ |
NA |
20000 |
只做原装 品质保障 |
MA4E2514规格书下载地址
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