SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes

Description The MA4E2501L-1290 SurMount™ Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts

SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes

Description The MA4E2501L-1290 SurMount™ Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts

SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes

Description and Applications The MA4E2501L-1290 SurMountä Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele

SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes

Description The MA4E2501L-1290 SurMount™ Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts

SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes

Description The MA4E2501L-1290 SurMount™ Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts

SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes

Description and Applications The MA4E2501L-1290 SurMountä Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele

SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes

Description and Applications The MA4E2501L-1290 SurMountä Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele

SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes

Description The MA4E2501L-1290 SurMount™ Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts

SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes

Description The MA4E2501L-1290 SurMount™ Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts

SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes

Description and Applications The MA4E2501L-1290 SurMountä Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass diele

封装/外壳：模具 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SCHOTTKY.SURMOUNT,SINGLE,SI 分立半导体产品 二极管 - 射频