Low Consumption Voltage and Current Controller for Battery Chargers and Adaptors

DESCRIPTION TSM1014 is a highly integrated solution for SMPS applications requiring CV (constant voltage) and CC (constant current) mode. TSM1014 integrates one voltage reference and two operational amplifiers. The voltage reference combined with one operational amplifier makes it an idea

8-BIT HMOS MICROPROCESSOR

8-BIT HMOS MICROPROCESSOR

料位开关

M8085A MIPI Receiver Test Solutions

文件：3.0962 Mbytes Page：15 Pages

8-BIT HMOS MICROPROCESSOR

封装/外壳：圆柱型（10.4mm 直径） 包装：散装 描述：LASER DIODE 808NM 5MW 10.4MM DIA 光电器件 激光二极管，模块

激光二极管

M8288 BUS CONTROLLER FOR M8066,M8088,M80186 PROCESSORS

文件：393.82 Kbytes Page：7 Pages

M8288 BUS CONTROLLER FOR M8066,M8088,M80186 PROCESSORS

文件：393.82 Kbytes Page：7 Pages

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)