HC266 QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN HC7266 QUAD EXCLUSIVE NOR GATE

DESCRIPTION The M54/74HC266/7266 are high speed CMOS QUAD EXCLUSIVE NOR GATES, fabricated in silicon gate C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 10 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC

QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN

DESCRIPTION The M54/74HC266/7266 are high speed CMOS QUAD EXCLUSIVE NOR GATES, fabricated in silicon gate C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 10 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC

QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN

DESCRIPTION The M54/74HC266/7266 are high speed CMOS QUAD EXCLUSIVE NOR GATES, fabricated in silicon gate C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 10 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC

HC266 QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN HC7266 QUAD EXCLUSIVE NOR GATE

DESCRIPTION The M54/74HC266/7266 are high speed CMOS QUAD EXCLUSIVE NOR GATES, fabricated in silicon gate C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 10 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC

HC266 QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN HC7266 QUAD EXCLUSIVE NOR GATE

DESCRIPTION The M54/74HC266/7266 are high speed CMOS QUAD EXCLUSIVE NOR GATES, fabricated in silicon gate C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 10 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC

HC266 QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN HC7266 QUAD EXCLUSIVE NOR GATE

DESCRIPTION The M54/74HC266/7266 are high speed CMOS QUAD EXCLUSIVE NOR GATES, fabricated in silicon gate C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 10 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC

HC266 QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN HC7266 QUAD EXCLUSIVE NOR GATE

DESCRIPTION The M54/74HC266/7266 are high speed CMOS QUAD EXCLUSIVE NOR GATES, fabricated in silicon gate C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 10 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC

QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN

DESCRIPTION The M54/74HC266/7266 are high speed CMOS QUAD EXCLUSIVE NOR GATES, fabricated in silicon gate C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 10 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC

QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN

DESCRIPTION The M54/74HC266/7266 are high speed CMOS QUAD EXCLUSIVE NOR GATES, fabricated in silicon gate C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 10 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC

QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN

DESCRIPTION The M54/74HC266/7266 are high speed CMOS QUAD EXCLUSIVE NOR GATES, fabricated in silicon gate C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 10 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC

封装/外壳：14-DIP（0.300"，7.62mm） 包装：卷带（TR） 描述：IC GATE XNOR OD 4CH 2-INP 14DIP 集成电路（IC） 门和反相器

封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC GATE XNOR OD 4CH 2-INP 14SO 集成电路（IC） 门和反相器

QUAD 2-INPUT EXCLUSIVE NOR GATES

General Description These devices are identical in pinout to the 54/74LS266. These circuits contain four independent 2-input Exclusive NOR gates. Unlike the 54/74LS266 which is an open collector gate, the HC/HCT 266 has standard CMOS push-pull outpus.

QUADRUPLE 2-INPUT EXCLUSIVE-NOR GATES WITH OPEN-DRAIN OUTPUTS

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