QUAD 2-INPUT AND GATE

DESCRIPTION The M54/74HC08 is a high speed CMOS QUAD 2-INPUTAND GATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOSlowpower consumption. ■ HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC =

QUAD 2-INPUT AND GATE

DESCRIPTION The M54/74HC08 is a high speed CMOS QUAD 2-INPUTAND GATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOSlowpower consumption. ■ HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC =

Quad dual-input and gate

Features • High speed: tPD = 7 ns (typ.) at VCC = 6 V • Low power dissipation: ICC = 1 μA (max.) at TA = 25 °C • High noise immunity: VNIH = VNIL = 28 % VCC (min.) • Symmetrical output impedance: |IOH| = IOL = 4 mA (min) • Balanced propagation delays: tPLH ~= tPHL • Wide operating voltag

Quad 2-Input AND Gate

Quad dual-input and gate

Features • High speed: tPD = 7 ns (typ.) at VCC = 6 V • Low power dissipation: ICC = 1 μA (max.) at TA = 25 °C • High noise immunity: VNIH = VNIL = 28 % VCC (min.) • Symmetrical output impedance: |IOH| = IOL = 4 mA (min) • Balanced propagation delays: tPLH ~= tPHL • Wide operating voltag

QUAD 2-INPUT AND GATE

DESCRIPTION The M54/74HC08 is a high speed CMOS QUAD 2-INPUTAND GATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOSlowpower consumption. ■ HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC =

QUAD 2-INPUT AND GATE

DESCRIPTION The M54/74HC08 is a high speed CMOS QUAD 2-INPUTAND GATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOSlowpower consumption. ■ HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC =

QUAD 2-INPUT AND GATE

DESCRIPTION The M54/74HC08 is a high speed CMOS QUAD 2-INPUTAND GATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOSlowpower consumption. ■ HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC =

QUAD 2-INPUT AND GATE

DESCRIPTION The M54/74HC08 is a high speed CMOS QUAD 2-INPUTAND GATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOSlowpower consumption. ■ HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC =

QUAD 2-INPUT AND GATE

DESCRIPTION The M54/74HC08 is a high speed CMOS QUAD 2-INPUTAND GATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOSlowpower consumption. ■ HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC =

Quad dual-input and gate

Features • High speed: tPD = 7 ns (typ.) at VCC = 6 V • Low power dissipation: ICC = 1 μA (max.) at TA = 25 °C • High noise immunity: VNIH = VNIL = 28 % VCC (min.) • Symmetrical output impedance: |IOH| = IOL = 4 mA (min) • Balanced propagation delays: tPLH ~= tPHL • Wide operating voltag

QUAD 2-INPUT AND GATE

DESCRIPTION The M54/74HC08 is a high speed CMOS QUAD 2-INPUTAND GATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOSlowpower consumption. ■ HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC =

QUAD 2-INPUT AND GATE

DESCRIPTION The M54/74HC08 is a high speed CMOS QUAD 2-INPUTAND GATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOSlowpower consumption. ■ HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC =

Quad dual-input and gate

Features • High speed: tPD = 7 ns (typ.) at VCC = 6 V • Low power dissipation: ICC = 1 μA (max.) at TA = 25 °C • High noise immunity: VNIH = VNIL = 28 % VCC (min.) • Symmetrical output impedance: |IOH| = IOL = 4 mA (min) • Balanced propagation delays: tPLH ~= tPHL • Wide operating voltag

Quad dual-input and gate

Features • High speed: tPD = 7 ns (typ.) at VCC = 6 V • Low power dissipation: ICC = 1 μA (max.) at TA = 25 °C • High noise immunity: VNIH = VNIL = 28 % VCC (min.) • Symmetrical output impedance: |IOH| = IOL = 4 mA (min) • Balanced propagation delays: tPLH ~= tPHL • Wide operating voltag

Quad dual-input and gate

Features • High speed: tPD = 7 ns (typ.) at VCC = 6 V • Low power dissipation: ICC = 1 μA (max.) at TA = 25 °C • High noise immunity: VNIH = VNIL = 28 % VCC (min.) • Symmetrical output impedance: |IOH| = IOL = 4 mA (min) • Balanced propagation delays: tPLH ~= tPHL • Wide operating voltag

封装/外壳：14-DIP（0.300"，7.62mm） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE AND 4CH 2-INP 14DIP 集成电路（IC） 门和反相器

封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE AND 4CH 2-INP 14SO 集成电路（IC） 门和反相器

Quad 2-input AND gate

DESCRIPTION The 74HC/HCT08 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT08 provide the 2-input AND function. FEATURES • Complies with JEDEC standard no. 8-1A • ESD protec

Quad 2?묲nput AND Gate High?뭁erformance Silicon?묰ate CMOS

Quad 2−Input AND Gate High−Performance Silicon−Gate CMOS The 74HC08 is identical in pinout to the LS08. The device inputs are compatible with Standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. Features • Output Drive Capability: 10 LSTTL Loads • Outputs Dire

QUADRUPLE 2-INPUT AND GATES

Description The 74HC08 provides provides four independent 2-input AND gates with standard push-pull outputs. The device is designed for operation with a power supply range of 2.0V to 6.0V. Features • Wide Supply Voltage Range from 2.0V to 6.0V • Sinks or Sources 4mA at VCC = 4.5V • CMOS Low P

High Speed CMOS Logic

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Quad 2-input AND gate

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