14 Pin Dip, 3.3 & 5.0 Volt, HCMOS, Clipped Sinewave Precision TCXO/TCVCXO

文件：708.46 Kbytes Page：7 Pages

14 Pin Dip, 3.3 & 5.0 Volt, HCMOS, Clipped Sinewave Precision TCXO/TCVCXO

文件：728.56 Kbytes Page：7 Pages

SWITCHING DIODE

Switching Diode

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

High-speed diode

DESCRIPTION The PMBD6050 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package. FEATURES • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 70 V • Repetitive peak reverse voltage:

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

Silicon Switching Diode

Silicon Switching Diode ● For high-speed switching applications