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位置：首页 > IC中文资料第5711页 > M5M5255

型号 功能描述 生产厂家 企业 LOGO 操作
M5M5255DP-45LL

262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current i

Mitsubishi

三菱电机

M5M5255DP-45XL

262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current i

Mitsubishi

三菱电机

M5M5255DP-55LL

262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current i

Mitsubishi

三菱电机

M5M5255DP-55XL

262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current i

Mitsubishi

三菱电机

M5M5255DP-70LL

262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current i

Mitsubishi

三菱电机

M5M5255DP-70XL

262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current i

Mitsubishi

三菱电机

M5M5255FP-45LL

262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current i

Mitsubishi

三菱电机

M5M5255FP-45XL

262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current i

Mitsubishi

三菱电机

M5M5255FP-55LL

262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current i

Mitsubishi

三菱电机

M5M5255FP-55XL

262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current i

Mitsubishi

三菱电机

M5M5255FP-70LL

262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current i

Mitsubishi

三菱电机

M5M5255FP-70XL

262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current i

Mitsubishi

三菱电机

M5M5255DP-45LL

262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM

Mitsubishi

三菱电机

M5M5255产品属性

  • 类型

    描述

  • 型号

    M5M5255

  • 制造商

    MITSUBISHI

  • 制造商全称

    Mitsubishi Electric Semiconductor

  • 功能描述

    262,144-BIT(32,768-WORD BY 8-BIT) CMOS STATIC RAM

M5M5255供应商更多...

更新时间：2025-12-26 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市凌旭科技有限公司
M5M5256AFP-10
MITSUBISH
2016+
SOP-28
8880
只做原装,假一罚十,公司可开17%增值税发票!
询价
深圳市威雅利发展有限公司
M5M5256AP-70
MITSUBISHI
97+
DIP28
8
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市毅创腾电子科技有限公司
M5M52560FP
MIT
23+
SOP
7512
绝对全新原装!现货!特价!请放心订购!
询价
谛辉(北京/上海/青岛 )电子科技有限公司
M5M5256AP-70
MIT
25+
SOP-14
18000
原厂直接发货进口原装
询价
标准国际(香港)有限公司
M5M5256AFP-70L
Mit
25+
24
公司优势库存 热卖中!!
询价
深圳市佳鑫美电子科技有限公司
M5M5255DP-70LL
MIT
25+
DIP
2700
全新原装自家现货优势!
询价
深圳市恒达亿科技有限公司
M5M5256
MIT
25+
SOP-28
4500
全新原装、诚信经营、公司现货销售!
询价
深圳市星佑电子有限公司
M5M5256AFP70
MITSUBISHI
05+
原厂原装
4405
只做全新原装真实现货供应
询价
贸泽芯城（深圳）电子科技有限公司
M5M5256AFP-70L
MIT
23+
SOP-28P
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
深圳市欧立现代科技有限公司
M5M52560FP
MIT
24+
SOP
6980
原装现货,可开13%税票
询价

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