位置：首页 > IC中文资料第11738页 > M59DR032E100N1T
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M59DR032E100N1T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION The M59DR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
M59DR032E100N1T产品属性
- 类型
描述
- 型号
M59DR032E100N1T
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+24 |
BGA |
9800 |
原装现货.优势热卖.终端BOM表可配单 |
|||
STMicroelectronics |
21+ |
60-FBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
|||
ST/意法 |
24+ |
BGA |
3000 |
全新原装现货 优势库存 |
|||
ST/意法 |
23+ |
BGA |
89630 |
当天发货全新原装现货 |
|||
ST |
24+ |
BGA-M48P |
2560 |
绝对原装!现货热卖! |
|||
ST |
24+ |
BGA |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
ST/意法 |
23+ |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
ST |
25+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
ST |
23+ |
48TFBGA (7x12) |
8000 |
只做原装现货 |
|||
ST |
2447 |
BGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
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M59DR032E100N1T规格书下载地址
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DdatasheetPDF页码索引
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