位置：首页 > IC中文资料 > M59DR008FN
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M59DR008FN | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally | STMICROELECTRONICS 意法半导体 |   | |
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally | STMICROELECTRONICS 意法半导体 | | ||
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally | STMICROELECTRONICS 意法半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMicroelectronics |
21+ |
60-FBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
|||
STMicroelectronics |
18+ |
ICFLASH32MBIT100NS48TFBG |
6800 |
公司原装现货 |
|||
ST |
2511 |
原厂原封 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
ST/意法 |
23+ |
BGA |
6000 |
专业配单保证原装正品假一罚十 |
|||
ST |
24+ |
BGA48 |
3629 |
原装优势!房间现货!欢迎来电! |
|||
ST |
2020+ |
BGA |
4500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ST |
24+ |
BGA |
2978 |
100%全新原装公司现货供应!随时可发货 |
|||
ST/意法 |
2450+ |
BGA |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ST |
25+23+ |
BGA |
35947 |
绝对原装正品全新进口深圳现货 |
|||
- |
23+ |
NA |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
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M59DR008FN规格书下载地址
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DdatasheetPDF页码索引
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