位置：首页 > IC中文资料第110页 > M59DR008E120N6T
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M59DR008E120N6T | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally | STMICROELECTRONICS 意法半导体 |   |
M59DR008E120N6T产品属性
- 类型
描述
- 型号
M59DR008E120N6T
- 功能描述
闪存 8M(512Kx16) 120ns
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
25+ |
BGA |
4500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ST |
0244+ |
BGA48 |
1000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
24+ |
BGA |
5632 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
ST |
24+ |
BGA |
3000 |
公司存货 |
|||
ST |
22+ |
SOP |
6000 |
十年配单,只做原装 |
|||
ST |
2511 |
原厂原封 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
ST |
25+ |
原厂原封 |
16900 |
原装，请咨询 |
|||
ST/意法 |
23+ |
BGA |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
ST/意法 |
02+ |
BGA |
880000 |
明嘉莱只做原装正品现货 |
|||
ST/意法 |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
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M59DR008E120N6T规格书下载地址
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