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M59价格
参考价格:¥0.0000
型号:M5951 品牌:Microtran 备注:这里有M59多少钱,2024年最近7天走势,今日出价,今日竞价,M59批发/采购报价,M59行情走势销售排行榜,M59报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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COMBINED SINGLE CHIP PCM CODEC AND FILTER DESCRIPTION TheM5913isfullyintegratedPCM(pulsecodemodulation)codecsandtransmit/receivefilterusingCMOSsilicongatetechnology. TheprimaryapplicationsfortheM5913aretelephonesystems: -Switching-M5913-DigitalPBX’sandCentral OfficeSwitchingSystems -Con | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
COMBINED SINGLE CHIP PCM CODEC AND FILTER DESCRIPTION TheM5913isfullyintegratedPCM(pulsecodemodulation)codecsandtransmit/receivefilterusingCMOSsilicongatetechnology. TheprimaryapplicationsfortheM5913aretelephonesystems: -Switching-M5913-DigitalPBX’sandCentral OfficeSwitchingSystems -Con | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
LAN Transceiver Description TheM59330Pisanintegratedcircuitfortwo-lineLANtransceivers,conformingtoJ1850specifications. Thechipincorporatesbuslineanomalydetectionfunctions;anomalousbehaviorcausestheERRsignaltogotoL.AselectorcausesanormalbussignaltobeoutputtoRX. By | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1 Mbit 64Kb x16, Burst Low Voltage Flash Memory DESCRIPTION TheM59BW102isanon-volatilememorythatmaybeerasedelectricallyatthechiplevelandprogrammedin-systemonaWord-by-Wordbasisusingonlyasingle3VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsobepro | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
1 Mbit 64Kb x16, Burst Low Voltage Flash Memory DESCRIPTION TheM59BW102isanon-volatilememorythatmaybeerasedelectricallyatthechiplevelandprogrammedin-systemonaWord-by-Wordbasisusingonlyasingle3VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsobepro | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
1 Mbit 64Kb x16, Burst Low Voltage Flash Memory DESCRIPTION TheM59BW102isanon-volatilememorythatmaybeerasedelectricallyatthechiplevelandprogrammedin-systemonaWord-by-Wordbasisusingonlyasingle3VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsobepro | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 |
M59产品属性
- 类型
描述
- 型号
M59
- 制造商
Tamura Corporation of America
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MIT |
23+ |
SOP |
8650 |
受权代理!全新原装现货特价热卖! |
|||
ST |
2016+ |
CDIP |
6528 |
只做原厂原装现货!终端客户个别型号可以免费送样品! |
|||
MIT |
21+ |
SOT89 |
6688 |
十年老店,原装正品 |
|||
MIT |
21+ |
SOT89 |
56000 |
公司进口原装现货 批量特价支持 |
|||
MIT |
2020+ |
SOP |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
ST |
22+ |
DIP20 |
3629 |
原装优势!房间现货!欢迎来电! |
|||
ST |
D/C |
DIP |
225 |
特价热销现货库存100%原装正品欢迎来电订购! |
|||
MIT |
23+ |
SOT89 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
MIT |
22+ |
SOP |
32350 |
原装正品 假一罚十 公司现货 |
|||
MIT |
23+ |
SOP/36 |
3200 |
全新原装、诚信经营、公司现货销售! |
M59规格书下载地址
M59参数引脚图相关
- msm7227a
- MP4
- MP3
- mos晶体管
- mos管
- MOSFET
- molex连接器
- mega16
- MCU
- mc34063
- mb881
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- M5R13RL
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- M5R114
- M5R110
- M5R107
- M5R_07
- M5PT34
- M5-PJ
- M5-N1
- M5-MHWS
- M5M29KB
- M5-LFR
- M5-H1
- M5-F1
- M5-D2
- M5962
- M5961F
- M5961
- M5956P
- M5956
- M5955P
- M5953P
- M5953
- M5949P
- M5949
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- M5944
- M59330P
- M5930P
- M5930
- M5913B1
- M5913
- M58-ZN
- M58-ZE
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- M58-LN
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- M5889NO
- M58725P
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- M5840
- M5832
- M54549L
- M54543L-B
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- M54534P
- M54533P
- M54531P
- M54530P
- M54529P
- M54528P
- M54527P
- M54526P
- M54525P
M59数据表相关新闻
M5836
M5836,全新.当天发货0755-82732291当天发货或门市自取.QQ:1755232575/QQ:1157611585,微信号:87680558.
2021-4-12M5838
M5838,全新.当天发货0755-82732291当天发货或门市自取.QQ:1755232575/QQ:1157611585,微信号:87680558.
2021-4-12M62342HP
https://hch01.114ic.com/
2020-11-13M61880FP
https://hch01.114ic.com/
2020-11-13M5677-ALAA 进口原装,主营军工级IC
M5677-ALAAALI,ALTERA(阿尔特拉),ADI亚德诺,军工级IC专业优势渠道
2020-7-13M61RB,M61SAL108B,M62216FP,M62339FP
M61RB,M61SAL108B,M62216FP,M62339FP
2020-1-7
DdatasheetPDF页码索引
- P1
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- P80