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位置：首页 > IC中文资料第2508页 > M59

M59价格

参考价格：￥0.0000

型号：M5951 品牌：Microtran 备注：这里有M59多少钱，2025年最近7天走势，今日出价，今日竞价，M59批发/采购报价，M59行情走势销售排行榜，M59报价。
型号 功能描述 生产厂家&企业 LOGO 操作
M5913

COMBINED SINGLE CHIP PCM CODEC AND FILTER

DESCRIPTION TheM5913isfullyintegratedPCM(pulsecodemodulation)codecsandtransmit/receivefilterusingCMOSsilicongatetechnology. TheprimaryapplicationsfortheM5913aretelephonesystems: -Switching-M5913-DigitalPBX’sandCentral OfficeSwitchingSystems -Con

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M5913B1

COMBINED SINGLE CHIP PCM CODEC AND FILTER

DESCRIPTION TheM5913isfullyintegratedPCM(pulsecodemodulation)codecsandtransmit/receivefilterusingCMOSsilicongatetechnology. TheprimaryapplicationsfortheM5913aretelephonesystems: -Switching-M5913-DigitalPBX’sandCentral OfficeSwitchingSystems -Con

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59330P

LAN Transceiver

Description TheM59330Pisanintegratedcircuitfortwo-lineLANtransceivers,conformingtoJ1850specifications. Thechipincorporatesbuslineanomalydetectionfunctions;anomalousbehaviorcausestheERRsignaltogotoL.AselectorcausesanormalbussignaltobeoutputtoRX. By

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M59BW102

1 Mbit 64Kb x16, Burst Low Voltage Flash Memory

DESCRIPTION TheM59BW102isanon-volatilememorythatmaybeerasedelectricallyatthechiplevelandprogrammedin-systemonaWord-by-Wordbasisusingonlyasingle3VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsobepro

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59BW10225N1T

1 Mbit 64Kb x16, Burst Low Voltage Flash Memory

DESCRIPTION TheM59BW102isanon-volatilememorythatmaybeerasedelectricallyatthechiplevelandprogrammedin-systemonaWord-by-Wordbasisusingonlyasingle3VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsobepro

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59BW102N

1 Mbit 64Kb x16, Burst Low Voltage Flash Memory

DESCRIPTION TheM59BW102isanon-volatilememorythatmaybeerasedelectricallyatthechiplevelandprogrammedin-systemonaWord-by-Wordbasisusingonlyasingle3VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsobepro

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR008

8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR008E

8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR008E100N1T

8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR008E100N6T

8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR008E100ZB1T

8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR008E100ZB6T

8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR008E120N1T

8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR008E120N6T

8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR008E120ZB1T

8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR008E120ZB6T

8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR008EN

8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR008EZB

8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR008F

8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR008F100N1T

8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR008F100N6T

8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR008F100ZB1T

8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR008F100ZB6T

8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR008F120N1T

8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR008F120N6T

8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR008F120ZB1T

8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR008F120ZB6T

8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR008FN

8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR008FZB

8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR008isan8Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR016

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR016C

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR016C100ZB1T

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR016C100ZB6T

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR016C120ZB1T

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR016C120ZB6T

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR016CZB

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR016D

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR016D100ZB1T

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR016D100ZB6T

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR016D120ZB1T

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR016D120ZB6T

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR016DZB

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR016-ZBT

16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR032A

32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR032A100N1T

32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR032A100N6T

32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR032A100ZB1T

32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR032A100ZB6T

32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR032A120N1T

32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR032A120N6T

32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR032A120ZB1T

32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR032A120ZB6T

32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR032AN

32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR032AZB

32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR032B

32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR032B100N1T

32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR032B100N6T

32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR032B100ZB1T

32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR032B100ZB6T

32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M59DR032B120N1T

32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

M59产品属性

  • 类型

    描述

  • 型号

    M59

  • 制造商

    Tamura Corporation of America

M59供应商更多...

更新时间：2025-7-29 15:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市昌和盛利电子有限公司
M5913BI
ST
23+
DIP
12335
询价
深圳市创新迹电子有限公司
M59150YME
MICROCHIP/微芯
22+
SOIC
20000
只做全新原装,假一罚十,支持BOM配单
询价
艾睿（深圳）半导体有限公司
M591951AML
MIT
2447
SOT89
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
深圳市华来深电子有限公司
M59159FP
MIT
23+
SOP
8650
受权代理!全新原装现货特价热卖!
询价
深圳市向鸿伟业电子有限公司
M59159FP
MIT
2402+
NA
8324
原装正品!实单价优!
询价
深圳市佳鑫美电子科技有限公司
M5913B1
ST
24+
DIP20
3629
原装优势!房间现货!欢迎来电!
询价
深圳市澳亿芯电子科技有限公司
M59203
MIT
24+
DIP
12000
原装正品 有挂就有货
询价
中天科工半导体（深圳）有限公司
M59209FP
MIT
20+
SSOP42
35830
原装优势主营型号-可开原型号增税票
询价
深圳市科达星科技有限公司
M5913B1-X
SIEMENS
24+
DIP
17500
原装现货 自家库存 欢迎来电
询价
深圳市得捷芯城科技有限公司
M59150YME
MREL/麦瑞
24+
NA/
7700
优势代理渠道,原装正品,可全系列订货开增值税票
询价

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