64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58CR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An option

64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58CR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An option

64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58CR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An option

64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58CR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An option

64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory

SUMMARY DESCRIPTION The M58CR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An option