型号 功能描述 生产厂家 企业 LOGO 操作
M54HC266

HC266 QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN HC7266 QUAD EXCLUSIVE NOR GATE

DESCRIPTION The M54/74HC266/7266 are high speed CMOS QUAD EXCLUSIVE NOR GATES, fabricated in silicon gate C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 10 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC

STMICROELECTRONICS

意法半导体

M54HC266

HC266 QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN HC7266 QUAD EXCLUSIVE NOR GATE

STMICROELECTRONICS

意法半导体

HC266 QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN HC7266 QUAD EXCLUSIVE NOR GATE

DESCRIPTION The M54/74HC266/7266 are high speed CMOS QUAD EXCLUSIVE NOR GATES, fabricated in silicon gate C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 10 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC

STMICROELECTRONICS

意法半导体

HC266 QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN HC7266 QUAD EXCLUSIVE NOR GATE

DESCRIPTION The M54/74HC266/7266 are high speed CMOS QUAD EXCLUSIVE NOR GATES, fabricated in silicon gate C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 10 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC

STMICROELECTRONICS

意法半导体

HC266 QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN HC7266 QUAD EXCLUSIVE NOR GATE

DESCRIPTION The M54/74HC266/7266 are high speed CMOS QUAD EXCLUSIVE NOR GATES, fabricated in silicon gate C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 10 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC

STMICROELECTRONICS

意法半导体

HC266 QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN HC7266 QUAD EXCLUSIVE NOR GATE

DESCRIPTION The M54/74HC266/7266 are high speed CMOS QUAD EXCLUSIVE NOR GATES, fabricated in silicon gate C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 10 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC

STMICROELECTRONICS

意法半导体

QUADRUPLE 2-INPUT EXCLUSIVE-NOR GATES WITH OPEN-DRAIN OUTPUTS

文件:77.88 Kbytes Page:4 Pages

TI

德州仪器

QUADRUPLE 2-INPUT EXCLUSIVE-NOR GATES WITH OPEN-DRAIN OUTPUTS

文件:77.88 Kbytes Page:4 Pages

TI

德州仪器

QUADRUPLE 2-INPUT EXCLUSIVE-NOR GATES WITH OPEN-DRAIN OUTPUTS

文件:77.88 Kbytes Page:4 Pages

TI

德州仪器

QUADRUPLE 2-INPUT EXCLUSIVE-NOR GATES WITH OPEN-DRAIN OUTPUTS

文件:77.88 Kbytes Page:4 Pages

TI

德州仪器

M54HC266产品属性

  • 类型

    描述

  • 型号

    M54HC266

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    HC266 QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN HC7266 QUAD EXCLUSIVE NOR GATE

更新时间:2026-3-15 10:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
QQ咨询
CDIP
826
全新原装 研究所指定供货商
ST
25+
原厂原封
16900
原装,请咨询
ST
26+
NA
60000
只有原装 可配单
ST
25+
CDIP14
9460
24+
23
ST/意法
23+
CDIP14
50000
全新原装正品现货,支持订货
ST
22+
CDIP
20000
公司只做原装 品质保证
ST
24+
IC
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
ST/意法
23+
CDIP
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ST
18+
原厂原装假一赔十
34
原厂很远现货很近,找现货选星佑电子,原厂原装假一赔

M54HC266数据表相关新闻