8 Mbit (13 x 64KByte Blocks 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory

Summary description The M50FLW080 is a 8 Mbit (1M x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing on production lines, an optional 12V power supply can be

8 Mbit (13 x 64KByte Blocks 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory

Summary description The M50FLW080 is a 8 Mbit (1M x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing on production lines, an optional 12V power supply can be

封装/外壳：40-TFSOP（0.724"，18.40mm 宽） 包装：托盘 描述：IC FLASH 8MBIT PARALLEL 40TSOP 集成电路（IC） 存储器

IC FLASH 8M PARALLEL 40TSOP

8 Mbit (13 x 64KByte Blocks 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory

Summary description The M50FLW080 is a 8 Mbit (1M x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing on production lines, an optional 12V power supply can be

8 Mbit (13 x 64KByte Blocks 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory

Summary description The M50FLW080 is a 8 Mbit (1M x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing on production lines, an optional 12V power supply can be