型号 功能描述 生产厂家 企业 LOGO 操作
M48Z2M1Y

16 Mb 2Mb x 8 ZEROPOWER SRAM

DESCRIPTION The M48Z2M1/2M1Y ZEROPOWER® RAM is a non-volatile 16,777,216 bit Static RAM organized as 2,097,152 words by 8 bits. The device combines two internal lithium batteries, CMOS SRAMs and a control circuit in a plastic 36 pin DIP long Module. ■ INTEGRATED LOW POWER SRAM, POWER-F

STMICROELECTRONICS

意法半导体

M48Z2M1Y

5V or 3.3V, 16 Mbit (2Mb x 8) ZEROPOWER SRAM

DESCRIPTION The M48Z2M1/2M1Y ZEROPOWER® RAM is a non-volatile 16,777,216 bit Static RAM organized as 2,097,152 words by 8 bits. The device combines two internal lithium batteries, CMOS SRAMs and a control circuit in a plastic 36 pin DIP long Module. ■ INTEGRATED LOW POWER SRAM, POWER-F

STMICROELECTRONICS

意法半导体

M48Z2M1Y

5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER짰 SRAM

文件:327.16 Kbytes Page:20 Pages

STMICROELECTRONICS

意法半导体

16 Mb 2Mb x 8 ZEROPOWER SRAM

DESCRIPTION The M48Z2M1/2M1Y ZEROPOWER® RAM is a non-volatile 16,777,216 bit Static RAM organized as 2,097,152 words by 8 bits. The device combines two internal lithium batteries, CMOS SRAMs and a control circuit in a plastic 36 pin DIP long Module. ■ INTEGRATED LOW POWER SRAM, POWER-F

STMICROELECTRONICS

意法半导体

5V or 3.3V, 16 Mbit (2Mb x 8) ZEROPOWER SRAM

DESCRIPTION The M48Z2M1/2M1Y ZEROPOWER® RAM is a non-volatile 16,777,216 bit Static RAM organized as 2,097,152 words by 8 bits. The device combines two internal lithium batteries, CMOS SRAMs and a control circuit in a plastic 36 pin DIP long Module. ■ INTEGRATED LOW POWER SRAM, POWER-F

STMICROELECTRONICS

意法半导体

5V or 3.3V, 16 Mbit (2Mb x 8) ZEROPOWER SRAM

DESCRIPTION The M48Z2M1/2M1Y ZEROPOWER® RAM is a non-volatile 16,777,216 bit Static RAM organized as 2,097,152 words by 8 bits. The device combines two internal lithium batteries, CMOS SRAMs and a control circuit in a plastic 36 pin DIP long Module. ■ INTEGRATED LOW POWER SRAM, POWER-F

STMICROELECTRONICS

意法半导体

16 Mb 2Mb x 8 ZEROPOWER SRAM

DESCRIPTION The M48Z2M1/2M1Y ZEROPOWER® RAM is a non-volatile 16,777,216 bit Static RAM organized as 2,097,152 words by 8 bits. The device combines two internal lithium batteries, CMOS SRAMs and a control circuit in a plastic 36 pin DIP long Module. ■ INTEGRATED LOW POWER SRAM, POWER-F

STMICROELECTRONICS

意法半导体

16 Mb 2Mb x 8 ZEROPOWER SRAM

DESCRIPTION The M48Z2M1/2M1Y ZEROPOWER® RAM is a non-volatile 16,777,216 bit Static RAM organized as 2,097,152 words by 8 bits. The device combines two internal lithium batteries, CMOS SRAMs and a control circuit in a plastic 36 pin DIP long Module. ■ INTEGRATED LOW POWER SRAM, POWER-F

STMICROELECTRONICS

意法半导体

5V or 3.3V, 16 Mbit (2Mb x 8) ZEROPOWER SRAM

DESCRIPTION The M48Z2M1/2M1Y ZEROPOWER® RAM is a non-volatile 16,777,216 bit Static RAM organized as 2,097,152 words by 8 bits. The device combines two internal lithium batteries, CMOS SRAMs and a control circuit in a plastic 36 pin DIP long Module. ■ INTEGRATED LOW POWER SRAM, POWER-F

STMICROELECTRONICS

意法半导体

5V or 3.3V, 16 Mbit (2Mb x 8) ZEROPOWER SRAM

DESCRIPTION The M48Z2M1/2M1Y ZEROPOWER® RAM is a non-volatile 16,777,216 bit Static RAM organized as 2,097,152 words by 8 bits. The device combines two internal lithium batteries, CMOS SRAMs and a control circuit in a plastic 36 pin DIP long Module. ■ INTEGRATED LOW POWER SRAM, POWER-F

STMICROELECTRONICS

意法半导体

16 Mb 2Mb x 8 ZEROPOWER SRAM

DESCRIPTION The M48Z2M1/2M1Y ZEROPOWER® RAM is a non-volatile 16,777,216 bit Static RAM organized as 2,097,152 words by 8 bits. The device combines two internal lithium batteries, CMOS SRAMs and a control circuit in a plastic 36 pin DIP long Module. ■ INTEGRATED LOW POWER SRAM, POWER-F

STMICROELECTRONICS

意法半导体

5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER짰 SRAM

文件:327.16 Kbytes Page:20 Pages

STMICROELECTRONICS

意法半导体

5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER짰 SRAM

文件:311.04 Kbytes Page:20 Pages

STMICROELECTRONICS

意法半导体

5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER짰 SRAM

文件:327.16 Kbytes Page:20 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:36-DIP 模块 包装:管件 描述:IC NVSRAM 16MBIT PAR 36PLDIP 集成电路(IC) 存储器

STMICROELECTRONICS

意法半导体

5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER짰 SRAM

文件:327.16 Kbytes Page:20 Pages

STMICROELECTRONICS

意法半导体

16 Mb 2Mb x 8 ZEROPOWER SRAM

DESCRIPTION The M48Z2M1/2M1Y ZEROPOWER® RAM is a non-volatile 16,777,216 bit Static RAM organized as 2,097,152 words by 8 bits. The device combines two internal lithium batteries, CMOS SRAMs and a control circuit in a plastic 36 pin DIP long Module. ■ INTEGRATED LOW POWER SRAM, POWER-F

STMICROELECTRONICS

意法半导体

5V or 3.3V, 16 Mbit (2Mb x 8) ZEROPOWER SRAM

DESCRIPTION The M48Z2M1/2M1Y ZEROPOWER® RAM is a non-volatile 16,777,216 bit Static RAM organized as 2,097,152 words by 8 bits. The device combines two internal lithium batteries, CMOS SRAMs and a control circuit in a plastic 36 pin DIP long Module. ■ INTEGRATED LOW POWER SRAM, POWER-F

STMICROELECTRONICS

意法半导体

5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER짰 SRAM

文件:327.16 Kbytes Page:20 Pages

STMICROELECTRONICS

意法半导体

M48Z2M1Y产品属性

  • 类型

    描述

  • 型号

    M48Z2M1Y

  • 功能描述

    NVRAM 16M(2Mx8) 70ns

  • RoHS

  • 制造商

    Maxim Integrated

  • 数据总线宽度

    8 bit

  • 存储容量

    1024 Kbit

  • 组织

    128 K x 8

  • 接口类型

    Parallel

  • 访问时间

    70 ns

  • 电源电压-最大

    5.5 V

  • 电源电压-最小

    4.5 V

  • 工作电流

    85 mA

  • 最大工作温度

    + 70 C

  • 最小工作温度

    0 C

  • 封装/箱体

    EDIP

  • 封装

    Tube

更新时间:2025-11-20 12:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
2511
DIP
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
ST/意法
22+
N
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
NA
25+
NA
1886
全新原装正品支持含税
ST
25+
PCDIP-36
2987
只售原装自家现货!诚信经营!欢迎来电!
ST
22+
DIP
12245
现货,原厂原装假一罚十!
ST
25+
DIP
16900
原装,请咨询
ST/意法
24+
SSOP
9600
原装现货,优势供应,支持实单!
st
NEW
36-DIPModul
53522
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
ST/意法
23+
DIP
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ST
23+
DIP
16900
正规渠道,只有原装!

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