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位置：首页 > IC中文资料第2848页 > M47

M47价格

参考价格：￥377.8780

型号：M471B5173EB0-YK000 品牌：SAM 备注：这里有M47多少钱，2024年最近7天走势，今日出价，今日竞价，M47批发/采购报价，M47行情走势销售排行榜，M47报价。
型号 功能描述 生产厂家&企业 LOGO 操作
M4700

M4700 SERIES AC/DC POWER SUPPLY

PRODUCTHIGHLIGHTS VITA62COMPLIANT 6UVPXFORMFACTOR AC/DCCONVERTER Upto1000WSteadyState Cybersecure

ENERCON

Enercon Technologies Europe AG

ENERCON
M4701

M4701 SERIES AC/DC POWER SUPPLY

PRODUCTHIGHLIGHTS VITA62COMPLIANT 6UVPXFORMFACTOR SOSATMALIGNED AC/DCCONVERTER Upto1200WSteadyState 1500WPeakPower CyberSecure

ENERCON

Enercon Technologies Europe AG

ENERCON
M4703

M4703 SERIES DC/DC POWER SUPPLY

PRODUCTHIGHLIGHTS VITA62COMPLIANT 6UVPXFORMFACTOR SOSATMALIGNED DC/DCCONVERTER Upto1200WSteadyState CyberSecure

ENERCON

Enercon Technologies Europe AG

ENERCON
M4705

M4705 SERIES AC/DC POWER SUPPLY

PRODUCTHIGHLIGHTS VITA62COMPLIANT VITA48.7ClassAAFBCOMPLIANT 6UVPXFORMFACTOR SOSATMALIGNED AC/DCCONVERTER Upto1200WSteadyState CyberSecure

ENERCON

Enercon Technologies Europe AG

ENERCON
M4706

M4706 SERIES AC/DC POWER SUPPLY

PRODUCTHIGHLIGHTS VITA62COMPLIANT VITA48.7ClassAAFBCOMPLIANT 6UVPXFORMFACTOR SOSATMALIGNED AC/DCCONVERTER Upto1200WSteadyState 100W@50mSecHoldup CyberSecure

ENERCON

Enercon Technologies Europe AG

ENERCON
M4707

M4707 SERIES DC/DC POWER SUPPLY

PRODUCTHIGHLIGHTS VITA62COMPLIANT VITA48.7ClassAAFBCOMPLIANT 6UVPXFORMFACTOR SOSATMALIGNED DC/DCCONVERTER Upto1200WSteadyState 1500WPeakPower CyberSecure

ENERCON

Enercon Technologies Europe AG

ENERCON
M470L1624FT0

DDR SDRAM SODIMM

200PinNonECC/ECCSODIMMbasedon256MbF-die(x16) Feature •Powersupply:Vdd:2.5V±0.2V,Vddq:2.5V±0.2V •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwi

SamsungSamsung Group

三星三星半导体

Samsung
M470L1624FT0-CA2

DDR SDRAM SODIMM

200PinNonECC/ECCSODIMMbasedon256MbF-die(x16) Feature •Powersupply:Vdd:2.5V±0.2V,Vddq:2.5V±0.2V •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwi

SamsungSamsung Group

三星三星半导体

Samsung
M470L1624FT0-CB0

DDR SDRAM SODIMM

200PinNonECC/ECCSODIMMbasedon256MbF-die(x16) Feature •Powersupply:Vdd:2.5V±0.2V,Vddq:2.5V±0.2V •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwi

SamsungSamsung Group

三星三星半导体

Samsung
M470L1624FT0-CB3

DDR SDRAM SODIMM

200PinNonECC/ECCSODIMMbasedon256MbF-die(x16) Feature •Powersupply:Vdd:2.5V±0.2V,Vddq:2.5V±0.2V •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwi

SamsungSamsung Group

三星三星半导体

Samsung
M470L1624FU0-CA2

DDR SDRAM SODIMM

Feature •Powersupply:Vdd:2.5V±0.2V,Vddq:2.5V±0.2V •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •ProgrammableReadlatency2,2.5(c

SamsungSamsung Group

三星三星半导体

Samsung
M470L1624FU0-CB0

DDR SDRAM SODIMM

Feature •Powersupply:Vdd:2.5V±0.2V,Vddq:2.5V±0.2V •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •ProgrammableReadlatency2,2.5(c

SamsungSamsung Group

三星三星半导体

Samsung
M470L1624FU0-CB3

DDR SDRAM SODIMM

Feature •Powersupply:Vdd:2.5V±0.2V,Vddq:2.5V±0.2V •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •ProgrammableReadlatency2,2.5(c

SamsungSamsung Group

三星三星半导体

Samsung
M470L2923DV0

DDR SDRAM Product Guide

ConsumerMemory

SamsungSamsung Group

三星三星半导体

Samsung
M470L3223DT0

256MB DDR SDRAM MODULE

GENERALDESCRIPTION TheSamsungM470L3223DT0is32Mbitx64DoubleDataRateSDRAMhighdensitymemorymodulesbasedonthirdgenof256MbDDRSDRAMrespectively. TheSamsungM470L3223DT0consistsofeightCMOS32Mx8bitwith4banksDoubleDataRateSDRAMsin66pinTSOP-II(400mil)packagesmo

SamsungSamsung Group

三星三星半导体

Samsung
M470L3223DT0-CA0

256MB DDR SDRAM MODULE

GENERALDESCRIPTION TheSamsungM470L3223DT0is32Mbitx64DoubleDataRateSDRAMhighdensitymemorymodulesbasedonthirdgenof256MbDDRSDRAMrespectively. TheSamsungM470L3223DT0consistsofeightCMOS32Mx8bitwith4banksDoubleDataRateSDRAMsin66pinTSOP-II(400mil)packagesmo

SamsungSamsung Group

三星三星半导体

Samsung
M470L3223DT0-CA2

256MB DDR SDRAM MODULE

GENERALDESCRIPTION TheSamsungM470L3223DT0is32Mbitx64DoubleDataRateSDRAMhighdensitymemorymodulesbasedonthirdgenof256MbDDRSDRAMrespectively. TheSamsungM470L3223DT0consistsofeightCMOS32Mx8bitwith4banksDoubleDataRateSDRAMsin66pinTSOP-II(400mil)packagesmo

SamsungSamsung Group

三星三星半导体

Samsung
M470L3223DT0-CB0

256MB DDR SDRAM MODULE

GENERALDESCRIPTION TheSamsungM470L3223DT0is32Mbitx64DoubleDataRateSDRAMhighdensitymemorymodulesbasedonthirdgenof256MbDDRSDRAMrespectively. TheSamsungM470L3223DT0consistsofeightCMOS32Mx8bitwith4banksDoubleDataRateSDRAMsin66pinTSOP-II(400mil)packagesmo

SamsungSamsung Group

三星三星半导体

Samsung
M470L3223DT0-CB3

256MB DDR SDRAM MODULE

GENERALDESCRIPTION TheSamsungM470L3223DT0is32Mbitx64DoubleDataRateSDRAMhighdensitymemorymodulesbasedonthirdgenof256MbDDRSDRAMrespectively. TheSamsungM470L3223DT0consistsofeightCMOS32Mx8bitwith4banksDoubleDataRateSDRAMsin66pinTSOP-II(400mil)packagesmo

SamsungSamsung Group

三星三星半导体

Samsung
M470L3223DT0-CLA0

256MB DDR SDRAM MODULE

GENERALDESCRIPTION TheSamsungM470L3223DT0is32Mbitx64DoubleDataRateSDRAMhighdensitymemorymodulesbasedonthirdgenof256MbDDRSDRAMrespectively. TheSamsungM470L3223DT0consistsofeightCMOS32Mx8bitwith4banksDoubleDataRateSDRAMsin66pinTSOP-II(400mil)packagesmo

SamsungSamsung Group

三星三星半导体

Samsung
M470L3223DT0-CLA2

256MB DDR SDRAM MODULE

GENERALDESCRIPTION TheSamsungM470L3223DT0is32Mbitx64DoubleDataRateSDRAMhighdensitymemorymodulesbasedonthirdgenof256MbDDRSDRAMrespectively. TheSamsungM470L3223DT0consistsofeightCMOS32Mx8bitwith4banksDoubleDataRateSDRAMsin66pinTSOP-II(400mil)packagesmo

SamsungSamsung Group

三星三星半导体

Samsung
M470L3223DT0-CLB0

256MB DDR SDRAM MODULE

GENERALDESCRIPTION TheSamsungM470L3223DT0is32Mbitx64DoubleDataRateSDRAMhighdensitymemorymodulesbasedonthirdgenof256MbDDRSDRAMrespectively. TheSamsungM470L3223DT0consistsofeightCMOS32Mx8bitwith4banksDoubleDataRateSDRAMsin66pinTSOP-II(400mil)packagesmo

SamsungSamsung Group

三星三星半导体

Samsung
M470L3223DT0-CLB3

256MB DDR SDRAM MODULE

GENERALDESCRIPTION TheSamsungM470L3223DT0is32Mbitx64DoubleDataRateSDRAMhighdensitymemorymodulesbasedonthirdgenof256MbDDRSDRAMrespectively. TheSamsungM470L3223DT0consistsofeightCMOS32Mx8bitwith4banksDoubleDataRateSDRAMsin66pinTSOP-II(400mil)packagesmo

SamsungSamsung Group

三星三星半导体

Samsung
M470L3224BT0

256MB DDR SDRAM MODULE

GENERALDESCRIPTION TheSamsungM470L3224BT0is32Mbitx64DoubleDataRateSDRAMhighdensitymemorymodulesbasedonfirstgenof256MbDDRSDRAMrespectively. TheSamsungM470L3224BT0consistsofeightCMOS16Mx16bitwith4banksDoubleDataRateSDRAMsin66pinTSOP-II(400mil)packagesm

SamsungSamsung Group

三星三星半导体

Samsung
M470L3224BTO

256MB DDR SDRAM MODULE

GENERALDESCRIPTION TheSamsungM470L3224BT0is32Mbitx64DoubleDataRateSDRAMhighdensitymemorymodulesbasedonfirstgenof256MbDDRSDRAMrespectively. TheSamsungM470L3224BT0consistsofeightCMOS16Mx16bitwith4banksDoubleDataRateSDRAMsin66pinTSOP-II(400mil)packagesm

SamsungSamsung Group

三星三星半导体

Samsung
M470L3224FT0

DDR SDRAM SODIMM

200PinNonECC/ECCSODIMMbasedon256MbF-die(x16) Feature •Powersupply:Vdd:2.5V±0.2V,Vddq:2.5V±0.2V •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwi

SamsungSamsung Group

三星三星半导体

Samsung
M470L3224FT0-CA2

DDR SDRAM SODIMM

200PinNonECC/ECCSODIMMbasedon256MbF-die(x16) Feature •Powersupply:Vdd:2.5V±0.2V,Vddq:2.5V±0.2V •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwi

SamsungSamsung Group

三星三星半导体

Samsung
M470L3224FT0-CB0

DDR SDRAM SODIMM

200PinNonECC/ECCSODIMMbasedon256MbF-die(x16) Feature •Powersupply:Vdd:2.5V±0.2V,Vddq:2.5V±0.2V •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwi

SamsungSamsung Group

三星三星半导体

Samsung
M470L3224FT0-CB3

DDR SDRAM SODIMM

200PinNonECC/ECCSODIMMbasedon256MbF-die(x16) Feature •Powersupply:Vdd:2.5V±0.2V,Vddq:2.5V±0.2V •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwi

SamsungSamsung Group

三星三星半导体

Samsung
M470L3224FU0

DDR SDRAM SODIMM

Feature •Powersupply:Vdd:2.5V±0.2V,Vddq:2.5V±0.2V •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •ProgrammableReadlatency2,2.5(c

SamsungSamsung Group

三星三星半导体

Samsung
M470L3224FU0-CA2

DDR SDRAM SODIMM

Feature •Powersupply:Vdd:2.5V±0.2V,Vddq:2.5V±0.2V •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •ProgrammableReadlatency2,2.5(c

SamsungSamsung Group

三星三星半导体

Samsung
M470L3224FU0-CB0

DDR SDRAM SODIMM

Feature •Powersupply:Vdd:2.5V±0.2V,Vddq:2.5V±0.2V •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •ProgrammableReadlatency2,2.5(c

SamsungSamsung Group

三星三星半导体

Samsung
M470L3224FU0-CB3

DDR SDRAM SODIMM

Feature •Powersupply:Vdd:2.5V±0.2V,Vddq:2.5V±0.2V •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •ProgrammableReadlatency2,2.5(c

SamsungSamsung Group

三星三星半导体

Samsung
M470L3224HU0

DDR SDRAM Product Guide

ConsumerMemory

SamsungSamsung Group

三星三星半导体

Samsung
M470L3224JU0

DDR SDRAM Product Guide

ConsumerMemory

SamsungSamsung Group

三星三星半导体

Samsung
M470L6423EN

512MB Unbuffered SODIMM(based on sTSOP)

Feature •Powersupply:Vdd:2.5V±0.2V,Vddq:2.5V±0.2V •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •ProgrammableReadlatency2,2.5(c

SamsungSamsung Group

三星三星半导体

Samsung
M470L6423EN0-A2

512MB Unbuffered SODIMM(based on sTSOP)

Feature •Powersupply:Vdd:2.5V±0.2V,Vddq:2.5V±0.2V •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •ProgrammableReadlatency2,2.5(c

SamsungSamsung Group

三星三星半导体

Samsung
M470L6423EN0-B0

512MB Unbuffered SODIMM(based on sTSOP)

Feature •Powersupply:Vdd:2.5V±0.2V,Vddq:2.5V±0.2V •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •ProgrammableReadlatency2,2.5(c

SamsungSamsung Group

三星三星半导体

Samsung
M470L6423EN0-CB3

512MB Unbuffered SODIMM(based on sTSOP)

Feature •Powersupply:Vdd:2.5V±0.2V,Vddq:2.5V±0.2V •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •ProgrammableReadlatency2,2.5(c

SamsungSamsung Group

三星三星半导体

Samsung
M470L6423EN0-CLB3

512MB Unbuffered SODIMM(based on sTSOP)

Feature •Powersupply:Vdd:2.5V±0.2V,Vddq:2.5V±0.2V •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •ProgrammableReadlatency2,2.5(c

SamsungSamsung Group

三星三星半导体

Samsung
M470L6524DU0

DDR SDRAM Product Guide

ConsumerMemory

SamsungSamsung Group

三星三星半导体

Samsung
M470T2863EH3

DDR2 SDRAM Memory

ConsumerMemory

SamsungSamsung Group

三星三星半导体

Samsung
M470T2863FB3

DDR2 SDRAM Memory

ConsumerMemory

SamsungSamsung Group

三星三星半导体

Samsung
M470T2864EH3

DDR2 SDRAM Memory

ConsumerMemory

SamsungSamsung Group

三星三星半导体

Samsung
M470T2864QZH3

DDR2 SDRAM Memory

ConsumerMemory

SamsungSamsung Group

三星三星半导体

Samsung
M470T2953BS0-CD5/CC

200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC

Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAdditiveLatency:0,1,2,3and4 •WriteLatency(WL)=Re

SamsungSamsung Group

三星三星半导体

Samsung
M470T2953BS3-CD5/CC

200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC

Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAdditiveLatency:0,1,2,3and4 •WriteLatency(WL)=Re

SamsungSamsung Group

三星三星半导体

Samsung
M470T2953BSY0-CD5/CC

200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC

Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAdditiveLatency:0,1,2,3and4 •WriteLatency(WL)=Re

SamsungSamsung Group

三星三星半导体

Samsung
M470T2953BSY3-CD5/CC

200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC

Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAdditiveLatency:0,1,2,3and4 •WriteLatency(WL)=Re

SamsungSamsung Group

三星三星半导体

Samsung
M470T2953BXX

200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC

Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAdditiveLatency:0,1,2,3and4 •WriteLatency(WL)=Re

SamsungSamsung Group

三星三星半导体

Samsung
M470T2953BY0

200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC

Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAdditiveLatency:0,1,2,3and4 •WriteLatency(WL)=Re

SamsungSamsung Group

三星三星半导体

Samsung
M470T2953BY0-LD5/CC

200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC

Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAdditiveLatency:0,1,2,3and4 •WriteLatency(WL)=Re

SamsungSamsung Group

三星三星半导体

Samsung
M470T2953BY3-LD5/CC

200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC

Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAdditiveLatency:0,1,2,3and4 •WriteLatency(WL)=Re

SamsungSamsung Group

三星三星半导体

Samsung
M470T2953CZ0

DDR2 Unbuffered SODIMM

Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd

SamsungSamsung Group

三星三星半导体

Samsung
M470T2953CZ0-CC

DDR2 Unbuffered SODIMM

Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd

SamsungSamsung Group

三星三星半导体

Samsung
M470T2953CZ0-CCC

DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC

Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd

SamsungSamsung Group

三星三星半导体

Samsung
M470T2953CZ0-CD5

DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC

Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd

SamsungSamsung Group

三星三星半导体

Samsung
M470T2953CZ0-CD6

DDR2 Unbuffered SODIMM

Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd

SamsungSamsung Group

三星三星半导体

Samsung
M470T2953CZ0-CE6

DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC

Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd

SamsungSamsung Group

三星三星半导体

Samsung
M470T2953CZ0-CE7

DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC

Features •Performancerange •JEDECstandard1.8V±0.1VPowerSupply •VDDQ=1.8V±0.1V •200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin •4Banks •PostedCAS •ProgrammableCASLatency:3,4,5 •ProgrammableAd

SamsungSamsung Group

三星三星半导体

Samsung

M47产品属性

  • 类型

    描述

  • 型号

    M47

  • 制造商

    OSRAM

  • 功能描述

    Tungsten halogen capsule lamp,20W 12Vac

M47供应商更多...

更新时间：2024-5-12 14:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市豪迈兴电子有限公司
M47050YMT-TR
MICROCHIP/微芯
2339+
UQFN-6
32280
原装现货 假一罚十！十年信誉只做原装！
询价
深圳市欧立现代科技有限公司
M47051
MITSUBIS
22+
SSOP34
6980
原装现货,可开13%税票
询价
深圳市昌和盛利电子有限公司
M47029
TI/TEXAS
23+
DIP
8931
询价
深圳市汇莱威科技有限公司
M470T2864FB3-CF700
SAMSUNG/三星
SODIMM
68900
原包原标签100%进口原装常备现货!
询价
深圳市昊创电子有限公司
M470T3354CZ3-CD5
SMART
0644
DDR1SO-DIMM/256MBDDR1SO/
239
原装香港现货真实库存。低价
询价
中科航电（深圳）电子集团有限公司
M470T2864EH3CE600A
SAMSUNG/三星
N/A
90000
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
深圳市特顺芯科技有限公司
M470L6524DU0CB3
SAM
300
询价
深圳市维尔达电子有限公司
M470L6524GL0-CB3
SAMSUNG
2023+
SMD
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
瀚佳科技(深圳)有限公司
M470T2864FB3-CF700
SAMSUNG
21+
SODIMM
35200
一级代理/放心采购
询价
深圳市百视威讯电子科技有限公司
M470T2864FB3-CF700
23+
N/A
89950
正品授权货源可靠
询价

M47芯片相关品牌

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M47规格书下载地址

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M47数据表相关新闻

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