8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

GENERAL DESCRIPTION The Samsung M464S0924DTS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M464S0924DTS consists of four CMOS 8M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 144-pin glass epoxy subs

8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

GENERAL DESCRIPTION The Samsung M464S0924DTS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M464S0924DTS consists of four CMOS 8M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 144-pin glass epoxy subs

8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

GENERAL DESCRIPTION The Samsung M464S0924DTS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M464S0924DTS consists of four CMOS 8M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 144-pin glass epoxy subs

8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

GENERAL DESCRIPTION The Samsung M464S0924DTS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M464S0924DTS consists of four CMOS 8M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 144-pin glass epoxy subs

8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

GENERAL DESCRIPTION The Samsung M464S0924DTS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M464S0924DTS consists of four CMOS 8M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 144-pin glass epoxy subs

8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

GENERAL DESCRIPTION The Samsung M464S0924DTS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M464S0924DTS consists of four CMOS 8M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 144-pin glass epoxy subs

8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

GENERAL DESCRIPTION The Samsung M464S0924DTS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M464S0924DTS consists of four CMOS 8M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 144-pin glass epoxy subs

8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

GENERAL DESCRIPTION The Samsung M464S0924DTS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M464S0924DTS consists of four CMOS 8M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 144-pin glass epoxy subs

8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

GENERAL DESCRIPTION The Samsung M464S0924DTS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M464S0924DTS consists of four CMOS 8M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 144-pin glass epoxy subs

64MB, 128MB Unbuffered SODIMM

SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb E-die 64-bit Non ECC Feature • Burst mode operation • Auto & self refresh capability (4096 Cycles/64ms) • LVTTL compatible inputs and outputs • Single 3.3V ± 0.3V power supply • MRS cycle with address key programs Latency (

144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC

Feature • Burst mode operation • Auto & self refresh capability (4096 Cycles/64ms) • LVTTL compatible inputs and outputs • Single 3.3V ± 0.3V power supply • MRS cycle with address key programs Latency (Access from column address) Burst length (1, 2, 4, 8 & Full page) Data sc