型号 功能描述 生产厂家 企业 LOGO 操作

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package

文件:248.6 Kbytes Page:26 Pages

STMICROELECTRONICS

意法半导体

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package

STMICROELECTRONICS

意法半导体

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package

文件:248.6 Kbytes Page:26 Pages

STMICROELECTRONICS

意法半导体

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package

文件:248.6 Kbytes Page:26 Pages

STMICROELECTRONICS

意法半导体

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package

文件:248.6 Kbytes Page:26 Pages

STMICROELECTRONICS

意法半导体

256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package

文件:478.73 Kbytes Page:24 Pages

NUMONYX

256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package

文件:478.73 Kbytes Page:24 Pages

NUMONYX

256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package

文件:478.73 Kbytes Page:24 Pages

NUMONYX

M39P0R907产品属性

  • 类型

    描述

  • 型号

    M39P0R907

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    512 Mbit(x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package

更新时间:2026-1-1 11:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
23+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
ST
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ST/意法
23+
BGA
50000
全新原装正品现货,支持订货
ST
24+
BGA
20000
低价现货抛售(美国 香港 新加坡)
ST
24+
BGA
5000
全现原装公司现货
ST/意法
22+
BGA
3000
原装正品,支持实单
ST/
26+
BGA
12000
原装,正品
ST
24+
BGA
2290
ST
2022+
2
全新原装 货期两周
ST
17+
BGA
9888
只做原装,现货库存

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