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M36价格
参考价格：￥4023.2489
型号：M3615T 品牌：Baldor 备注：这里有M36多少钱，2025年最近7天走势，今日出价，今日竞价，M36批发/采购报价，M36行情走势销售排行榜，M36报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MIKRON M360 TYPICALAPPLICATIONS Sapphireprobeopticalpyrometercalibrations Infraredtemperaturesensors Infraredthermalimagingsystems Spectrographicanalyzers Spectralradiometers Heatfluxmeters | ADVANCEDENERGYAdvanced Energy Industries, Inc. 先进能源工业先进能源工业公司 |  |   | |
4K(512 x 8) HIGH-SPEED PROM
| IntelIntel Corporation 英特尔 |  | | |
UNINTERRUPTIBLE POWER SUPPLY PRODUCTHIGHLIGHTS •FULLCOMPLIANCEWITHMIL-STD-1399(SECTION300B) •3URACKMOUNT •2.5KW/3KVAUPS •LONGHOLDUPTIME2HR@1KW/1HR@2KW M362-4MAINFEATURES: •19”,3URack-mount,18.25”deepwithrecessedI/Oconnectorstofitinshallowracks. •FullCompliancewithMIL-STD-1399 | ENERCON Enercon Technologies Europe AG |  | | |
4K(512 x 8) HIGH-SPEED PROM
| IntelIntel Corporation 英特尔 | | | |
PC100 Unbuffered DIMM(168pin) SPD Specification(64Mb D-die base) PC100UnbufferedDIMM M366S0424DTS-C80/C1H/C1L •Organization:4Mx64 •Composition:4Mx16*4 •Usedcomponentpart#:K4S641632D-TC80/TC1H/TC1L •#ofrowsinmodule:1row •#ofbanksincomponent:4banks •Feature:1,000milheight&singlesidedcomponent •Refresh:4K/64m | SamsungSamsung semiconductor 三星三星半导体 |  | | |
PC133/PC100 Unbuffered DIMM GENERALDESCRIPTION TheSamsungM366S2953MTSisa64Mbitx64SynchronousDynamicRAMhighdensitymemorymodule.TheSamsungM366S2953MTSconsistsofsixteenCMOS64Mx8bitwith4banksSynchronousDRAMsinTSOP-II400milpackageanda2KEEPROMin8-pinTSSOPpackageona168-pinglass-epoxy | SamsungSamsung semiconductor 三星三星半导体 | | | |
PC133/PC100 Unbuffered DIMM GENERALDESCRIPTION TheSamsungM366S2953MTSisa64Mbitx64SynchronousDynamicRAMhighdensitymemorymodule.TheSamsungM366S2953MTSconsistsofsixteenCMOS64Mx8bitwith4banksSynchronousDRAMsinTSOP-II400milpackageanda2KEEPROMin8-pinTSSOPpackageona168-pinglass-epoxy | SamsungSamsung semiconductor 三星三星半导体 | | | |
PC133/PC100 Unbuffered DIMM GENERALDESCRIPTION TheSamsungM366S2953MTSisa64Mbitx64SynchronousDynamicRAMhighdensitymemorymodule.TheSamsungM366S2953MTSconsistsofsixteenCMOS64Mx8bitwith4banksSynchronousDRAMsinTSOP-II400milpackageanda2KEEPROMin8-pinTSSOPpackageona168-pinglass-epoxy | SamsungSamsung semiconductor 三星三星半导体 | | | |
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERALDESCRIPTION TheSamsungM366S3253DTSisa32Mbitx64SynchronousDynamicRAMhighdensitymemorymodule.TheSamsungM366S325DCTSconsistsofeightCMOS32Mx8bitwith4banksSynchronousDRAMsinTSOP-II400milpackageanda2KEEPROMin8-pinTSSOPpackageona168-pinglass-epoxysu | SamsungSamsung semiconductor 三星三星半导体 | | | |
PC133/PC100 Unbuffered DIMM GENERALDESCRIPTION TheSamsungM366S2953MTSisa64Mbitx64SynchronousDynamicRAMhighdensitymemorymodule.TheSamsungM366S2953MTSconsistsofsixteenCMOS64Mx8bitwith4banksSynchronousDRAMsinTSOP-II400milpackageanda2KEEPROMin8-pinTSSOPpackageona168-pinglass-epoxy | SamsungSamsung semiconductor 三星三星半导体 | | | |
DDR SDRAM Product Guide ConsumerMemory | SamsungSamsung semiconductor 三星三星半导体 | | | |
256MB DDR SDRAM MODULE GENERALDESCRIPTION TheSamsungM368L3223DTLis32Mbitx64DoubleDataRateSDRAMhighdensitymemorymodules.TheSamsungM368L3223DTLconsistsofeightCMOS32Mx8bitwith4banksDoubleDataRateSDRAMsin66pinTSOP-II(400mil)packagesmountedona184pinglass-epoxysubstrate.Four0.1uF | SamsungSamsung semiconductor 三星三星半导体 | | | |
256MB DDR SDRAM MODULE GENERALDESCRIPTION TheSamsungM368L3223DTLis32Mbitx64DoubleDataRateSDRAMhighdensitymemorymodules.TheSamsungM368L3223DTLconsistsofeightCMOS32Mx8bitwith4banksDoubleDataRateSDRAMsin66pinTSOP-II(400mil)packagesmountedona184pinglass-epoxysubstrate.Four0.1uF | SamsungSamsung semiconductor 三星三星半导体 | | | |
DDR SDRAM Product Guide ConsumerMemory | SamsungSamsung semiconductor 三星三星半导体 | | | |
DDR SDRAM Product Guide ConsumerMemory | SamsungSamsung semiconductor 三星三星半导体 | | | |
DDR SDRAM Product Guide ConsumerMemory | SamsungSamsung semiconductor 三星三星半导体 | | | |
DDR SDRAM Product Guide ConsumerMemory | SamsungSamsung semiconductor 三星三星半导体 | | | |
DDR SDRAM Product Guide ConsumerMemory | SamsungSamsung semiconductor 三星三星半导体 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
PIN CONTACT Transportationġ | JAEJapan Aviation Electronics Industry, Ltd. 航空电子日本航空电子工业株式会社 |  | | |
256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package Description TheM36P0R8070E0combinestwomemoriesinamultichippackage: ●256-MbitmultiplebankFlashmemory(theM58PR256J) ●128-MbitPSRAM(theM69KB128AA). ThisdatasheetshouldbereadinconjunctionwiththeM58PR256JandM69KB128AAdatasheets,whichareavailablefromyourlocalNum | NUMONYX numonyx |  | | |
256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package Description TheM36P0R8070E0combinestwomemoriesinamultichippackage: ●256-MbitmultiplebankFlashmemory(theM58PR256J) ●128-MbitPSRAM(theM69KB128AA). ThisdatasheetshouldbereadinconjunctionwiththeM58PR256JandM69KB128AAdatasheets,whichareavailablefromyourlocalNum | NUMONYX numonyx | | | |
256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package Description TheM36P0R8070E0combinestwomemoriesinamultichippackage: ●256-MbitmultiplebankFlashmemory(theM58PR256J) ●128-MbitPSRAM(theM69KB128AA). ThisdatasheetshouldbereadinconjunctionwiththeM58PR256JandM69KB128AAdatasheets,whichareavailablefromyourlocalNum | NUMONYX numonyx | | | |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Summarydescription TheM36P0R9070E0combinestwomemorydevicesinoneMulti-ChipPackage: ●512-MbitMultipleBankFlashmemory(theM58PR512J). ●128MbitPSRAM(theM69KB128AB). Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespecttoeachother.It | NUMONYX numonyx | | | |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Summarydescription TheM36P0R9070E0combinestwomemorydevicesinoneMulti-ChipPackage: ●512-MbitMultipleBankFlashmemory(theM58PR512J). ●128MbitPSRAM(theM69KB128AB). Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespecttoeachother.It | NUMONYX numonyx | | | |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Summarydescription TheM36P0R9070E0combinestwomemorydevicesinoneMulti-ChipPackage: ●512-MbitMultipleBankFlashmemory(theM58PR512J). ●128MbitPSRAM(theM69KB128AB). Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespecttoeachother.It | NUMONYX numonyx | | | |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Summarydescription TheM36P0R9070E0combinestwomemorydevicesinoneMulti-ChipPackage: ●512-MbitMultipleBankFlashmemory(theM58PR512J). ●128MbitPSRAM(theM69KB128AB). Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespecttoeachother.It | NUMONYX numonyx | | | |
SOCKET CONTACT (GOLD PLATING) Transportationġ | JAEJapan Aviation Electronics Industry, Ltd. 航空电子日本航空电子工业株式会社 | | | |
32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package SUMMARYDESCRIPTION TheM36W0R5020T0andM36W0R5020B0combinetwomemorydevicesinaMulti-ChipPackage: ■a32-Mbit,MultipleBankFlashmemory,theM58WR032FT/B ■anda4-MbitSRAM. Recommendedoperatingconditionsdonotallowmorethanonememorytobeactiveatthesametime. FEATURESS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
M36产品属性
- 类型
描述
- 型号
M36
- 制造商
Farnell/Duratool
- 功能描述
SCREW SLT CHEESE STEEL M3X6
- 制造商
Farnell/Duratool
- 功能描述
SCREW, SLT, CHEESE, STEEL, M3X6
- 制造商
PRIVATE LABEL
- 功能描述
SCREW, SLT, CHEESE, STEEL, M3X6, Thread Size -
- Imperial
-, Thread Size -
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Matsuo(松尾电机) |
24+ |
8215 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
ALI |
24+ |
NA/ |
2404 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ALI |
2016+ |
QFP |
2600 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ALI |
24+ |
BGA |
6000 |
全新原装正品现货,假一赔佰 |
|||
ALI |
25+ |
QFP |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
ALI |
21+ |
QFP-256 |
16800 |
只做原装,质量保证 |
|||
ALI |
20+ |
QFP |
19570 |
原装优势主营型号-可开原型号增税票 |
|||
ALI |
24+ |
BGA |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
TI/德州仪器 |
95 |
DIP |
250 |
只售原装正品 |
|||
ALI |
10+ |
QFP |
78 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
M36芯片相关品牌
M36规格书下载地址
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M36数据表相关新闻
M30620ECFP
M30620ECFP
2023-4-23M30291FCHP#U3A
公司原装现货价格优势绝对诚信
2022-4-28M30280F8HP#U9B 原装正品
原包装原标签特价销售假一罚十
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M37544G2ASP原装正品
2021-8-5M3622-0014-LQ64G 公司现货
M3622-0014-LQ64G公司现货
2020-7-15M3821-ALCAA
M3821-ALCAA深圳市拓亿芯电子有限公司，专业代理，分销世界名牌电子元器件，是一家专业化，品牌化的电子元器件，质量第一，诚信经营。
2019-3-7
DdatasheetPDF页码索引
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