M36价格

参考价格:¥4023.2489

型号:M3615T 品牌:Baldor 备注:这里有M36多少钱,2025年最近7天走势,今日出价,今日竞价,M36批发/采购报价,M36行情走势销售排行榜,M36报价。
型号 功能描述 生产厂家&企业 LOGO 操作

MIKRON M360

TYPICALAPPLICATIONS Sapphireprobeopticalpyrometercalibrations Infraredtemperaturesensors Infraredthermalimagingsystems Spectrographicanalyzers Spectralradiometers Heatfluxmeters

ADVANCEDENERGYAdvanced Energy Industries, Inc.

先进能源工业先进能源工业公司

ADVANCEDENERGY

4K(512 x 8) HIGH-SPEED PROM

IntelIntel Corporation

英特尔

Intel

UNINTERRUPTIBLE POWER SUPPLY

PRODUCTHIGHLIGHTS •FULLCOMPLIANCEWITHMIL-STD-1399(SECTION300B) •3URACKMOUNT •2.5KW/3KVAUPS •LONGHOLDUPTIME2HR@1KW/1HR@2KW M362-4MAINFEATURES: •19”,3URack-mount,18.25”deepwithrecessedI/Oconnectorstofitinshallowracks. •FullCompliancewithMIL-STD-1399

ENERCON

Enercon Technologies Europe AG

ENERCON

4K(512 x 8) HIGH-SPEED PROM

IntelIntel Corporation

英特尔

Intel

PC100 Unbuffered DIMM(168pin) SPD Specification(64Mb D-die base)

PC100UnbufferedDIMM M366S0424DTS-C80/C1H/C1L •Organization:4Mx64 •Composition:4Mx16*4 •Usedcomponentpart#:K4S641632D-TC80/TC1H/TC1L •#ofrowsinmodule:1row •#ofbanksincomponent:4banks •Feature:1,000milheight&singlesidedcomponent •Refresh:4K/64m

SamsungSamsung semiconductor

三星三星半导体

Samsung

PC133/PC100 Unbuffered DIMM

GENERALDESCRIPTION TheSamsungM366S2953MTSisa64Mbitx64SynchronousDynamicRAMhighdensitymemorymodule.TheSamsungM366S2953MTSconsistsofsixteenCMOS64Mx8bitwith4banksSynchronousDRAMsinTSOP-II400milpackageanda2KEEPROMin8-pinTSSOPpackageona168-pinglass-epoxy

SamsungSamsung semiconductor

三星三星半导体

Samsung

PC133/PC100 Unbuffered DIMM

GENERALDESCRIPTION TheSamsungM366S2953MTSisa64Mbitx64SynchronousDynamicRAMhighdensitymemorymodule.TheSamsungM366S2953MTSconsistsofsixteenCMOS64Mx8bitwith4banksSynchronousDRAMsinTSOP-II400milpackageanda2KEEPROMin8-pinTSSOPpackageona168-pinglass-epoxy

SamsungSamsung semiconductor

三星三星半导体

Samsung

PC133/PC100 Unbuffered DIMM

GENERALDESCRIPTION TheSamsungM366S2953MTSisa64Mbitx64SynchronousDynamicRAMhighdensitymemorymodule.TheSamsungM366S2953MTSconsistsofsixteenCMOS64Mx8bitwith4banksSynchronousDRAMsinTSOP-II400milpackageanda2KEEPROMin8-pinTSSOPpackageona168-pinglass-epoxy

SamsungSamsung semiconductor

三星三星半导体

Samsung

32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD

GENERALDESCRIPTION TheSamsungM366S3253DTSisa32Mbitx64SynchronousDynamicRAMhighdensitymemorymodule.TheSamsungM366S325DCTSconsistsofeightCMOS32Mx8bitwith4banksSynchronousDRAMsinTSOP-II400milpackageanda2KEEPROMin8-pinTSSOPpackageona168-pinglass-epoxysu

SamsungSamsung semiconductor

三星三星半导体

Samsung

PC133/PC100 Unbuffered DIMM

GENERALDESCRIPTION TheSamsungM366S2953MTSisa64Mbitx64SynchronousDynamicRAMhighdensitymemorymodule.TheSamsungM366S2953MTSconsistsofsixteenCMOS64Mx8bitwith4banksSynchronousDRAMsinTSOP-II400milpackageanda2KEEPROMin8-pinTSSOPpackageona168-pinglass-epoxy

SamsungSamsung semiconductor

三星三星半导体

Samsung

DDR SDRAM Product Guide

ConsumerMemory

SamsungSamsung semiconductor

三星三星半导体

Samsung

256MB DDR SDRAM MODULE

GENERALDESCRIPTION TheSamsungM368L3223DTLis32Mbitx64DoubleDataRateSDRAMhighdensitymemorymodules.TheSamsungM368L3223DTLconsistsofeightCMOS32Mx8bitwith4banksDoubleDataRateSDRAMsin66pinTSOP-II(400mil)packagesmountedona184pinglass-epoxysubstrate.Four0.1uF

SamsungSamsung semiconductor

三星三星半导体

Samsung

256MB DDR SDRAM MODULE

GENERALDESCRIPTION TheSamsungM368L3223DTLis32Mbitx64DoubleDataRateSDRAMhighdensitymemorymodules.TheSamsungM368L3223DTLconsistsofeightCMOS32Mx8bitwith4banksDoubleDataRateSDRAMsin66pinTSOP-II(400mil)packagesmountedona184pinglass-epoxysubstrate.Four0.1uF

SamsungSamsung semiconductor

三星三星半导体

Samsung

DDR SDRAM Product Guide

ConsumerMemory

SamsungSamsung semiconductor

三星三星半导体

Samsung

DDR SDRAM Product Guide

ConsumerMemory

SamsungSamsung semiconductor

三星三星半导体

Samsung

DDR SDRAM Product Guide

ConsumerMemory

SamsungSamsung semiconductor

三星三星半导体

Samsung

DDR SDRAM Product Guide

ConsumerMemory

SamsungSamsung semiconductor

三星三星半导体

Samsung

DDR SDRAM Product Guide

ConsumerMemory

SamsungSamsung semiconductor

三星三星半导体

Samsung

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

PIN CONTACT

Transportationġ

JAEJapan Aviation Electronics Industry, Ltd.

航空电子日本航空电子工业株式会社

JAE

256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package

Description TheM36P0R8070E0combinestwomemoriesinamultichippackage: ●256-MbitmultiplebankFlashmemory(theM58PR256J) ●128-MbitPSRAM(theM69KB128AA). ThisdatasheetshouldbereadinconjunctionwiththeM58PR256JandM69KB128AAdatasheets,whichareavailablefromyourlocalNum

NUMONYX

numonyx

NUMONYX

256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package

Description TheM36P0R8070E0combinestwomemoriesinamultichippackage: ●256-MbitmultiplebankFlashmemory(theM58PR256J) ●128-MbitPSRAM(theM69KB128AA). ThisdatasheetshouldbereadinconjunctionwiththeM58PR256JandM69KB128AAdatasheets,whichareavailablefromyourlocalNum

NUMONYX

numonyx

NUMONYX

256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package

Description TheM36P0R8070E0combinestwomemoriesinamultichippackage: ●256-MbitmultiplebankFlashmemory(theM58PR256J) ●128-MbitPSRAM(theM69KB128AA). ThisdatasheetshouldbereadinconjunctionwiththeM58PR256JandM69KB128AAdatasheets,whichareavailablefromyourlocalNum

NUMONYX

numonyx

NUMONYX

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

Summarydescription TheM36P0R9070E0combinestwomemorydevicesinoneMulti-ChipPackage: ●512-MbitMultipleBankFlashmemory(theM58PR512J). ●128MbitPSRAM(theM69KB128AB). Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespecttoeachother.It

NUMONYX

numonyx

NUMONYX

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

Summarydescription TheM36P0R9070E0combinestwomemorydevicesinoneMulti-ChipPackage: ●512-MbitMultipleBankFlashmemory(theM58PR512J). ●128MbitPSRAM(theM69KB128AB). Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespecttoeachother.It

NUMONYX

numonyx

NUMONYX

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

Summarydescription TheM36P0R9070E0combinestwomemorydevicesinoneMulti-ChipPackage: ●512-MbitMultipleBankFlashmemory(theM58PR512J). ●128MbitPSRAM(theM69KB128AB). Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespecttoeachother.It

NUMONYX

numonyx

NUMONYX

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

Summarydescription TheM36P0R9070E0combinestwomemorydevicesinoneMulti-ChipPackage: ●512-MbitMultipleBankFlashmemory(theM58PR512J). ●128MbitPSRAM(theM69KB128AB). Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespecttoeachother.It

NUMONYX

numonyx

NUMONYX

SOCKET CONTACT (GOLD PLATING)

Transportationġ

JAEJapan Aviation Electronics Industry, Ltd.

航空电子日本航空电子工业株式会社

JAE

32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package

SUMMARYDESCRIPTION TheM36W0R5020T0andM36W0R5020B0combinetwomemorydevicesinaMulti-ChipPackage: ■a32-Mbit,MultipleBankFlashmemory,theM58WR032FT/B ■anda4-MbitSRAM. Recommendedoperatingconditionsdonotallowmorethanonememorytobeactiveatthesametime. FEATURESS

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

M36产品属性

  • 类型

    描述

  • 型号

    M36

  • 制造商

    Farnell/Duratool

  • 功能描述

    SCREW SLT CHEESE STEEL M3X6

  • 制造商

    Farnell/Duratool

  • 功能描述

    SCREW, SLT, CHEESE, STEEL, M3X6

  • 制造商

    PRIVATE LABEL

  • 功能描述

    SCREW, SLT, CHEESE, STEEL, M3X6, Thread Size -

  • Imperial

    -, Thread Size -

更新时间:2025-6-10 14:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ALI
23+
QFP
12800
公司只有原装 欢迎来电咨询。
ALI
QFP
23+
6000
原装现货有上库存就有货全网最低假一赔万
ALI
10+
QFP
78
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ALI
2223+
BGA
26800
只做原装正品假一赔十为客户做到零风险
TI
24+
DIP16
25
只做原装,欢迎询价,量大价优
ALI/扬智
21+
QFP
29
原装现货假一赔十
24+
3000
公司存货
TI/TEXAS
23+
DIP
8931
ALI
2020+
BGA
672
百分百原装正品 真实公司现货库存 本公司只做原装 可
ALI
23+
LQFP-256
21000
原厂原标正品假一罚十

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