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型号	功能描述	生产厂家企业	LOGO
M3010	IR TV/VCD TRANSMITTER FEATURES 功能敘述 • PIN compatible with SAA3010. • DO with a 38 KHz carrier for IR. APPLICATION 產品應用 • TV/VCD/Audio equipment.	MOSDESIGN 一华半导体	MOSDESIGN
M3014	IR TV/VCD TRANSMITTER IR CONTROL IC GENERAL DESCRIPTION 功能敘述 The M3014 is a remote control transmitter ASIC for TV, VTR , etc. It has a total of 448 commands which are divided into 7 sub-system groups with 64 commands each. The sub-system code may be selected by a press button, a slider switch or hard wired. FEATURES 產品特長 ‧ Fla	MOSDESIGN 一华半导体	MOSDESIGN
M3014P	IR TV/VCD TRANSMITTER IR CONTROL IC GENERAL DESCRIPTION 功能敘述 The M3014 is a remote control transmitter ASIC for TV, VTR , etc. It has a total of 448 commands which are divided into 7 sub-system groups with 64 commands each. The sub-system code may be selected by a press button, a slider switch or hard wired. FEATURES 產品特長 ‧ Fla	MOSDESIGN 一华半导体	MOSDESIGN
M30162040054X0ISAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30162040054X0ISAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30162040054X0IWAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30162040054X0IWAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30162040054X0PSAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30162040054X0PSAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30162040054X0PWAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30162040054X0PWAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30162040108X0ISAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30162040108X0ISAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30162040108X0IWAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30162040108X0IWAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30162040108X0PSAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30162040108X0PSAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30162040108X0PWAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30162040108X0PWAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M3016316035NX	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316035NX0IBCR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316035NX0IBCY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316035NX0ITBR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316035NX0ITBY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316035NX0PBCR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316035NX0PBCY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316035NX0PTBR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316035NX0PTBY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316045NX	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316045NX0IBCR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316045NX0IBCY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316045NX0ITBR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316045NX0ITBY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316045NX0PBCR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316045NX0PBCY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316045NX0PTBR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316045NX0PTBY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M30100	SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER	RENESAS 瑞萨	RENESAS
M30100	SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER 文件：3.30221 Mbytes Page：164 Pages	RENESAS 瑞萨	RENESAS
M30100T-PTC	Converter for Connecting 32-pin 0.8mm-pitch QFP for M30100T-PRB (for M16C/10 Group M30100) 文件：135.55 Kbytes Page：1 Pages	RENESAS 瑞萨	RENESAS
M30100T-PTC	Converter for Connecting 32-pin 0.8mm-pitch QFP for M30100T-PRB (for M16C/10 Group M30100)	RENESAS 瑞萨	RENESAS
M30102	SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER 文件：3.30221 Mbytes Page：164 Pages	RENESAS 瑞萨	RENESAS
M30102T-PTC	Converter for Connecting 48-pin 0.5mm-pitch QFP for M30100T-PRB (for M16C/10 Group M30102) 文件：135.81 Kbytes Page：1 Pages	RENESAS 瑞萨	RENESAS
M30102T-PTC	Converter for Connecting 48-pin 0.5mm-pitch QFP for M30100T-PRB (for M16C/10 Group M30102)	RENESAS 瑞萨	RENESAS
M301100	All Dimension In MM 文件：34.21 Kbytes Page：1 Pages	E-SWITCH	E-SWITCH
M301101	All Dimension In MM 文件：41.11 Kbytes Page：1 Pages	E-SWITCH	E-SWITCH
M301102	All Dimension In MM 文件：34.32 Kbytes Page：1 Pages	E-SWITCH	E-SWITCH
M301104	All Dimension In MM 文件：42.72 Kbytes Page：1 Pages	E-SWITCH	E-SWITCH
M301105	All Dimension In MM 文件：35.07 Kbytes Page：1 Pages	E-SWITCH	E-SWITCH
M301107	All Dimension In MM 文件：42.88 Kbytes Page：1 Pages	E-SWITCH	E-SWITCH
M301108	All Dimension In MM 文件：39.39 Kbytes Page：1 Pages	E-SWITCH	E-SWITCH
M301110	All Dimension In MM 文件：42.66 Kbytes Page：1 Pages	E-SWITCH	E-SWITCH
M301113	All Dimension In MM 文件：33.81 Kbytes Page：1 Pages	E-SWITCH	E-SWITCH
M301114	All Dimension In MM 文件：33.28 Kbytes Page：1 Pages	E-SWITCH	E-SWITCH
M301116	All Dimension In MM 文件：36.67 Kbytes Page：1 Pages	E-SWITCH	E-SWITCH
M301117	All Dimension In MM 文件：42.53 Kbytes Page：1 Pages	E-SWITCH	E-SWITCH
M301118	All Dimension In MM 文件：42.65 Kbytes Page：1 Pages	E-SWITCH	E-SWITCH
M301119	All Dimension In MM 文件：41.53 Kbytes Page：1 Pages	E-SWITCH	E-SWITCH
M301120	All Dimension In MM 文件：41.62 Kbytes Page：1 Pages	E-SWITCH	E-SWITCH
M301121	All Dimension In MM 文件：68.34 Kbytes Page：1 Pages	E-SWITCH	E-SWITCH

M301产品属性

类型
描述
型号
M301
制造商
Honeywell Sensing and Control
功能描述
GENERAL MARKET VRS

M301供应商更多...

更新时间：2025-12-24 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	M30102M3-655FP	RENESAS/瑞萨	24+	NA/	500	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市高捷芯城科技有限公司	M30102F3VFP#U2J	RENESAS(瑞萨)/IDT	24+		7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市科芯源微电子有限公司	M30102F3FP#U2	RENESAS/瑞萨	25+	QFP	54815	百分百原装现货,实单必成,欢迎询价	询价
深圳市恒达亿科技有限公司	M3010-S24	MAINOWER	25+	QFP	3200	全新原装、诚信经营、公司现货销售!	询价
深圳市豪迈兴电子有限公司	M30102F3-540FP	RENESAS	24+	QFP	5632	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市科翼源电子有限公司	M30102F3FP#U2	RENESAS	23+	QFP	2796	原厂原装正品	询价
深圳市中远芯科技有限公司	M3010-S24	MAINOWER	3	SOP24	12	原装现货	询价
深圳市赛美科科技有限公司	M30102F3-540FP	RENESAS		QFP	68500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市福田区绿盛电子商行	M30102F3	RENESAS	2015+	QFP	19889	一级代理原装现货,特价热卖!	询价
深圳市诺美思科技有限公司	M30102M3-655FP#U2	RENESAS		原厂封装	9800	原装进口公司现货假一赔百	询价

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原包装原标签特价销售假一罚十
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M301产品属性

M301供应商更多...

M301芯片相关品牌

M301规格书下载地址

M301参数引脚图相关

M301数据表相关新闻

M2S050T-FGG896

M30291FCHP#U3A

M30280F8HP#U9B 原装正品

M30280F8HP#U5B 原装正品

M2S050T-FGG484I 嵌入式处理器和控制器

M300系列连接器M300-0010045

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