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型号	功能描述	生产厂家企业	LOGO
AON6407	丝印代码：M30100P；P-Channel Enhancement Mode Power MOSFET Features Vps= -30V, Ip= -100A Rns(on)	TECHPUBLIC 台舟电子	TECHPUBLIC
IRF9317TRPBF-TP	丝印代码：M3015P；P-Channel Enhancement Mode MOSFET APPLICATIONS Power Managementin Notebook Computer Portatble Equipment and Battery Powered Systems	TECHPUBLIC 台舟电子	TECHPUBLIC
SI4465ADY	丝印代码：M3015P；P-Channel Enhancement Mode MOSFET FEATURES -30V/-15A, Rosion) =6-8MQ(Max.) @ Vg =-10V Rosion =13MQ(Max) @V, =-4.5V	TECHPUBLIC 台舟电子	TECHPUBLIC
TPM30100PD56	丝印代码：M30100P；P-Channel Enhancement Mode Power MOSFET Features Vps= -30V, Ip= -100A Roson)	TECHPUBLIC 台舟电子	TECHPUBLIC
M3010	IR TV/VCD TRANSMITTER FEATURES 功能敘述 • PIN compatible with SAA3010. • DO with a 38 KHz carrier for IR. APPLICATION 產品應用 • TV/VCD/Audio equipment.	MOSDESIGN 一华半导体	MOSDESIGN
M3014	IR TV/VCD TRANSMITTER IR CONTROL IC GENERAL DESCRIPTION 功能敘述 The M3014 is a remote control transmitter ASIC for TV, VTR , etc. It has a total of 448 commands which are divided into 7 sub-system groups with 64 commands each. The sub-system code may be selected by a press button, a slider switch or hard wired. FEATURES 產品特長 ‧ Fla	MOSDESIGN 一华半导体	MOSDESIGN
M3014P	IR TV/VCD TRANSMITTER IR CONTROL IC GENERAL DESCRIPTION 功能敘述 The M3014 is a remote control transmitter ASIC for TV, VTR , etc. It has a total of 448 commands which are divided into 7 sub-system groups with 64 commands each. The sub-system code may be selected by a press button, a slider switch or hard wired. FEATURES 產品特長 ‧ Fla	MOSDESIGN 一华半导体	MOSDESIGN
M30162040054X0ISAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30162040054X0ISAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30162040054X0IWAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30162040054X0IWAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30162040054X0PSAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30162040054X0PSAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30162040054X0PWAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30162040054X0PWAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30162040108X0ISAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30162040108X0ISAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30162040108X0IWAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30162040108X0IWAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30162040108X0PSAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30162040108X0PSAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30162040108X0PWAR	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M30162040108X0PWAY	High Performance Serial MRAM Memory Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,	RENESAS 瑞萨	RENESAS
M3016316035NX	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316035NX0IBCR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316035NX0IBCY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316035NX0ITBR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316035NX0ITBY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316035NX0PBCR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316035NX0PBCY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316035NX0PTBR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316035NX0PTBY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316045NX	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316045NX0IBCR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316045NX0IBCY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316045NX0ITBR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316045NX0ITBY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316045NX0PBCR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316045NX0PBCY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316045NX0PTBR	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M3016316045NX0PTBY	Parallel MRAM Memory x16 Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind	RENESAS 瑞萨	RENESAS
M30100	SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER	RENESAS 瑞萨	RENESAS
M30100	SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER 文件：3.30221 Mbytes Page：164 Pages	RENESAS 瑞萨	RENESAS
M30100T-PTC	Converter for Connecting 32-pin 0.8mm-pitch QFP for M30100T-PRB (for M16C/10 Group M30100) 文件：135.55 Kbytes Page：1 Pages	RENESAS 瑞萨	RENESAS
M30100T-PTC	Converter for Connecting 32-pin 0.8mm-pitch QFP for M30100T-PRB (for M16C/10 Group M30100)	RENESAS 瑞萨	RENESAS
M30102	SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER 文件：3.30221 Mbytes Page：164 Pages	RENESAS 瑞萨	RENESAS
M30102T-PTC	Converter for Connecting 48-pin 0.5mm-pitch QFP for M30100T-PRB (for M16C/10 Group M30102) 文件：135.81 Kbytes Page：1 Pages	RENESAS 瑞萨	RENESAS
M30102T-PTC	Converter for Connecting 48-pin 0.5mm-pitch QFP for M30100T-PRB (for M16C/10 Group M30102)	RENESAS 瑞萨	RENESAS
M301100	All Dimension In MM 文件：34.21 Kbytes Page：1 Pages	E-SWITCH	E-SWITCH
M301101	All Dimension In MM 文件：41.11 Kbytes Page：1 Pages	E-SWITCH	E-SWITCH
M301102	All Dimension In MM 文件：34.32 Kbytes Page：1 Pages	E-SWITCH	E-SWITCH
M301104	All Dimension In MM 文件：42.72 Kbytes Page：1 Pages	E-SWITCH	E-SWITCH
M301105	All Dimension In MM 文件：35.07 Kbytes Page：1 Pages	E-SWITCH	E-SWITCH
M301107	All Dimension In MM 文件：42.88 Kbytes Page：1 Pages	E-SWITCH	E-SWITCH
M301108	All Dimension In MM 文件：39.39 Kbytes Page：1 Pages	E-SWITCH	E-SWITCH
M301110	All Dimension In MM 文件：42.66 Kbytes Page：1 Pages	E-SWITCH	E-SWITCH
M301113	All Dimension In MM 文件：33.81 Kbytes Page：1 Pages	E-SWITCH	E-SWITCH
M301114	All Dimension In MM 文件：33.28 Kbytes Page：1 Pages	E-SWITCH	E-SWITCH
M301116	All Dimension In MM 文件：36.67 Kbytes Page：1 Pages	E-SWITCH	E-SWITCH
M301117	All Dimension In MM 文件：42.53 Kbytes Page：1 Pages	E-SWITCH	E-SWITCH

M301产品属性

类型
描述
Config.：
Single
Type：
N
BVDSS (V)：
30

M301供应商更多...

更新时间：2026-5-25 10:08:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	AON6407	AOS(万代)	26+	DFN 5x6	10548	原厂订货渠道,支持账期,一站式服务!	询价
深圳市浩翊科技有限公司	AON6407-MS	MSKSEMI/美森科	25+	DFN5X6-8L	25000		询价
深圳市赛特兴科技有限公司	AON6407	AOS	23+	DFN	3005	正规渠道,只有原装!	询价
深圳市河锋鑫科技有限公司	AON6407	AOS/万代	20+	DFN5x6	120000	原装正品可含税交易	询价
深圳市振宏微科技有限公司	AON6407	AOS/万代	23+	NA	7825	原装正品!清仓处理!	询价
深圳市泓利达微科技有限公司	AON6407	AOS美国万代	24+	DFN5*6	189008	专营AOS美国万代优势现货 AOS全系列场效应管	询价
深圳市金华微盛电子有限公司	AON6407	AO	19+	DFN-85X6	25300		询价
深圳市正纳电子有限公司	AON6407	AOS万代	23+	DFN5x6	32078	10年以上分销商,原装进口件,服务型企业	询价
深圳市创新迹电子有限公司	AON6407	AOS/万代	2021+	DFN8	9000	原装现货,随时欢迎询价	询价
贸泽芯城（深圳）电子科技有限公司	AON6407	AOS	23+	DFN	6000	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价

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M301规格书下载地址

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M301数据表相关新闻

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M30280F8HP#U9B 原装正品
原包装原标签特价销售假一罚十
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M30280F8HP#U5B 原装正品
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M2S050T-FGG484I 嵌入式处理器和控制器
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M300系列连接器M300-0010045
3.00mm间距的高可靠性高性能连接器每个信号触点最高10A 四金手指接触设计
2019-11-27

DdatasheetPDF页码索引

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找IC，尽在114IC

M301产品属性

M301供应商更多...

M301芯片相关品牌

M301规格书下载地址

M301参数引脚图相关

M301数据表相关新闻

M2S050T-FGG896

M30291FCHP#U3A

M30280F8HP#U9B 原装正品

M30280F8HP#U5B 原装正品

M2S050T-FGG484I 嵌入式处理器和控制器

M300系列连接器M300-0010045

DdatasheetPDF页码索引