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位置：首页 > IC中文资料第12011页 > M30

M30价格

参考价格：￥0.0000

型号：M300 品牌：Xcelite 备注：这里有M30多少钱，2025年最近7天走势，今日出价，今日竞价，M30批发/采购报价，M30行情走势销售排行榜，M30报价。
型号 功能描述 生产厂家&企业 LOGO 操作
M30

RECTIFIER, up to 3kV, 330mA, 2關s

AXIALLEADED HERMETICALLY SEALED HIGH VOLTAGE STANDARD RECOVERY RECTIFIER DIODE • High thermal shock resistance • Hermetically sealed with Metoxilite fused metal oxide • Low reverse leakage currents • Miniature packaging • Monolythic cavity free

SEMTECHSemtech Corporation

升特

SEMTECH
M30

封装/外壳：轴向 包装：散装 描述：DIODE GEN PURP 3KV 330MA AXIAL 分立半导体产品 二极管 - 整流器 - 单

SEMTECHSemtech Corporation

升特

SEMTECH
M30

包装：盒 描述：DOUBLE BALANCED MIXER - ULTRA BR RF/IF，射频/中频和 RFID 射频混频器

ETC

知名厂家

M300

MIKRON M300

TYPICAL APPLICATIONS  Infrared temperature sensors  Infrared thermal imaging systems  Spectrographic analyzers  Spectral radiometers  Heat flux meters

ADVANCEDENERGYAdvanced Energy Industries, Inc.

先进能源工业先进能源工业公司

ADVANCEDENERGY
M3000

Metal Clad 10AX 2G 2-way Switch

DESCRIPTION Metal Clad 10AX 2G 2-way Switch

KNIGHTSBRIDGE

ML Accessories Limited.

KNIGHTSBRIDGE
M3001-1

ENERCON P/N M3001-1 Liquid Cooled Cold Plate Specifications and Parameters

Design Features1 • Two sides cooling • Adaptable design platform • Controlled Pressure drop (using internal orifices) • High pressure (burst-proof)2: 300 [psi] • Leakage proof3: 250 [psi] • Pressure loss @ 1[GPM] : 15[psi] (see table below) • Quick release valves • Internal orifice • Max

ENERCON

Enercon Technologies Europe AG

ENERCON
M3002-1

ENERCON P/N M3002-1 Liquid Cooled Cold Plate Specifications and Parameters

Design Features1 • Single side cooling • Adaptable design platform • Controlled Pressure drop (using internal orifices) • High pressure (burst-proof)2: 300 [psi] • Leakage proof3: 250 [psi] • Pressure loss @1.8[GPM] : 12 [psi] (see table below) • Quick release valves • Max weight: 6.3 [kg]

ENERCON

Enercon Technologies Europe AG

ENERCON
M3003-1

ENERCON P/N M3003-1 Cooling unit with fans Specifications and Parameters

Design Features • High thermal performance cooling unit • Enables simultaneous testing of several products. • Adaptable design: o Cold plate can be replaced by the user. o Cold plate design is adapted according to the customer's specific heat dissipation requirements. o Cooling unit length2.

ENERCON

Enercon Technologies Europe AG

ENERCON
M30042040054X0ISAR

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M30042040054X0ISAY

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M30042040054X0IWAR

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M30042040054X0IWAY

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M30042040054X0PSAR

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M30042040054X0PSAY

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M30042040054X0PWAR

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M30042040054X0PWAY

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M30042040108X0ISAR

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M30042040108X0ISAY

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M30042040108X0IWAR

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M30042040108X0IWAY

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M30042040108X0PSAR

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M30042040108X0PSAY

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M30042040108X0PWAR

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M30042040108X0PWAY

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M3004316

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M3004316035NX

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M3004316035NX0IBCR

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M3004316035NX0IBCY

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M3004316035NX0ITAR

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M3004316035NX0ITAY

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M3004316035NX0ITBR

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M3004316035NX0ITBY

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M3004316035NX0PBCR

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M3004316035NX0PBCY

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M3004316035NX0PTAR

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M3004316035NX0PTAY

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M3004316035NX0PTBR

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M3004316035NX0PTBY

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M3004316045NX

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M3004316045NX0IBCR

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M3004316045NX0IBCY

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M3004316045NX0ITAR

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M3004316045NX0ITAY

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M3004316045NX0ITBR

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M3004316045NX0ITBY

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M3004316045NX0PBCR

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M3004316045NX0PBCY

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M3004316045NX0PTAR

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M3004316045NX0PTAY

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M3004316045NX0PTBR

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M3004316045NX0PTBY

Parallel MRAM Memory x16

Features • Interface  Parallel Asynchronous x16 • Technology  40nm pMTJ STT-MRAM • Data Retention (see Table 16. Endurance and Data Retention Density)  4Mb, 8Mb, 16Mb, 32Mb • Operating Voltage Range  VCC: 2.70V – 3.60V • Operating Temperature Range  Industrial: -40°C to 85°C  Ind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M3004LAB1

REMOTE CONTROL TRANSMITTER

DESCRIPTION The M3004LAB1/M3004LDtransmitter IC are designed for infrared remote control systems. It has a total of 448 commands which are divided into 7 sub-system groups with 64 commands each. The sub-system code may be selected by a press but ton, a slider switch or hard wired.The M3004LAB1/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M3004LD

REMOTE CONTROL TRANSMITTER

DESCRIPTION The M3004LAB1/M3004LDtransmitter IC are designed for infrared remote control systems. It has a total of 448 commands which are divided into 7 sub-system groups with 64 commands each. The sub-system code may be selected by a press but ton, a slider switch or hard wired.The M3004LAB1/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M3004LD

REMOTE CONTROL TRANSMITTER

DESCRIPTION The M3004LAB1/M3004LDtransmitter IC are designed for infrared remote control systems. It has a total of 448 commands which are divided into 7 sub-system groups with 64 commands each. The sub-system code may be selected by a press but ton, a slider switch or hard wired.The M3004LAB1/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M3004LDT

REMOTE CONTROL TRANSMITTER

DESCRIPTION The M3004LAB1/M3004LDtransmitter IC are designed for infrared remote control systems. It has a total of 448 commands which are divided into 7 sub-system groups with 64 commands each. The sub-system code may be selected by a press but ton, a slider switch or hard wired.The M3004LAB1/

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
M30082040054X0ISAR

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M30082040054X0ISAY

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M30082040054X0IWAR

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M30082040054X0IWAY

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
M30082040054X0PSAR

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

M30产品属性

  • 类型

    描述

  • 型号

    M30

  • 制造商

    SEMTECH

  • 制造商全称

    Semtech Corporation

  • 功能描述

    RECTIFIER, up to 3kV, 330mA, 2μs

M30供应商更多...

更新时间：2025-8-5 17:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市凯睿晟科技有限公司
M3062LFGPFP#U3C
Renesas(瑞萨)
24+
QFP-100(14x20)
10000
优势物料,支持实单
询价
深圳市明嘉莱科技有限公司
M3004LAB1
ST/意法
99+
DIP-20
880000
明嘉莱只做原装正品现货
询价
深圳市振宏微科技有限公司
M306H3MC-A37FP
MITSUBISHI
23+
BGAQFP
8659
原装公司现货!原装正品价格优势.
询价
深圳市华睿芯科技有限公司
M30623MCA-B75GP
MITSUBISH
24+
QFP
20000
全新原厂原装，进口正品现货，正规渠道可含税！！
询价
华富测量(深圳)传感技术有限公司
M30626FJPGP
RENESAS
2138+
QFP
8960
专营BGA,QFP原装现货,假一赔十
询价
深圳市创新迹电子有限公司
M30873MHB-A80GP
RENESAS/瑞萨
2022+
QFP
30000
进口原装现货供应,原装 假一罚十
询价
千层芯半导体(深圳)有限公司
M3013N
24+
SOT-223
25000
一级专营品牌全新原装热卖
询价
深圳市锦喆鸿电子有限公司
M30620SFP
瑞萨电子|Renesas
21+
QFP
12588
原装正品,价格优势
询价
深圳市正纳电子有限公司
M3062LFGPFP#U3C
RENESAS
13+
100-QFP
33000
询价
深圳市华斯顿科技有限公司
M30624FGNFP
RENESAS
25+23+
QFP100
29781
绝对原装正品全新进口深圳现货
询价

M30芯片相关品牌

  • CHENDA
  • FRANCEJOINT
  • HARWIN
  • IRF
  • Ricoh
  • SCHURTER
  • Semikron
  • Sensata
  • SICK
  • SKYWORKS
  • TDK
  • TOCOS

M30规格书下载地址

M30参数引脚图相关

M30数据表相关新闻

DdatasheetPDF页码索引

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