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型号 功能描述 生产厂家 企业 LOGO 操作
M2V56S20

256M Synchronous DRAM

DESCRIPTION M2V56S20ATP/ KT is a 4-bank x 16777216-word x 4-bit, M2V56S30ATP/ KT is a 4-bank x 8388608-word x 8-bit, M2V56S40ATP/ KT is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40

MITSUBISHI

三菱电机

256M Synchronous DRAM

DESCRIPTION M2V56S20ATP/ KT is a 4-bank x 16777216-word x 4-bit, M2V56S30ATP/ KT is a 4-bank x 8388608-word x 8-bit, M2V56S40ATP/ KT is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40AKT

MITSUBISHI

三菱电机

256M Synchronous DRAM

DESCRIPTION M2V56S20ATP/ KT is a 4-bank x 16777216-word x 4-bit, M2V56S30ATP/ KT is a 4-bank x 8388608-word x 8-bit, M2V56S40ATP/ KT is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40AKT

MITSUBISHI

三菱电机

256M Synchronous DRAM

DESCRIPTION M2V56S20ATP/ KT is a 4-bank x 16777216-word x 4-bit, M2V56S30ATP/ KT is a 4-bank x 8388608-word x 8-bit, M2V56S40ATP/ KT is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40AKT

MITSUBISHI

三菱电机

256M Synchronous DRAM

DESCRIPTION M2V56S20ATP/ KT is a 4-bank x 16777216-word x 4-bit, M2V56S30ATP/ KT is a 4-bank x 8388608-word x 8-bit, M2V56S40ATP/ KT is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40AKT

MITSUBISHI

三菱电机

256M Synchronous DRAM

DESCRIPTION M2V56S20ATP/ KT is a 4-bank x 16777216-word x 4-bit, M2V56S30ATP/ KT is a 4-bank x 8388608-word x 8-bit, M2V56S40ATP/ KT is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40AKT

MITSUBISHI

三菱电机

256M Synchronous DRAM

DESCRIPTION M2V56S20ATP/ KT is a 4-bank x 16777216-word x 4-bit, M2V56S30ATP/ KT is a 4-bank x 8388608-word x 8-bit, M2V56S40ATP/ KT is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40AKT

MITSUBISHI

三菱电机

256M Synchronous DRAM

DESCRIPTION M2V56S20ATP/ KT is a 4-bank x 16777216-word x 4-bit, M2V56S30ATP/ KT is a 4-bank x 8388608-word x 8-bit, M2V56S40ATP/ KT is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40AKT

MITSUBISHI

三菱电机

256M Synchronous DRAM

DESCRIPTION M2V56S20TP is a 4-bank x 16777216-word x 4-bit, M2V56S30TP is a 4-bank x 8388608-word x 8-bit, M2V56S40TP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40TP achieve very

MITSUBISHI

三菱电机

256M Synchronous DRAM

DESCRIPTION M2V56S20TP is a 4-bank x 16777216-word x 4-bit, M2V56S30TP is a 4-bank x 8388608-word x 8-bit, M2V56S40TP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40TP achieve very

MITSUBISHI

三菱电机

256M Synchronous DRAM

DESCRIPTION M2V56S20ATP/ KT is a 4-bank x 16777216-word x 4-bit, M2V56S30ATP/ KT is a 4-bank x 8388608-word x 8-bit, M2V56S40ATP/ KT is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40AKT

MITSUBISHI

三菱电机

256M Synchronous DRAM

DESCRIPTION M2V56S20TP is a 4-bank x 16777216-word x 4-bit, M2V56S30TP is a 4-bank x 8388608-word x 8-bit, M2V56S40TP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40TP achieve very

MITSUBISHI

三菱电机

256M Synchronous DRAM

DESCRIPTION M2V56S20TP is a 4-bank x 16777216-word x 4-bit, M2V56S30TP is a 4-bank x 8388608-word x 8-bit, M2V56S40TP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40TP achieve very

MITSUBISHI

三菱电机

256M Synchronous DRAM

MITSUBISHI

三菱电机

256M Synchronous DRAM

MITSUBISHI

三菱电机

256M Synchronous DRAM

MITSUBISHI

三菱电机

M2V56S20产品属性

  • 类型

    描述

  • 型号

    M2V56S20

  • 制造商

    MITSUBISHI

  • 制造商全称

    Mitsubishi Electric Semiconductor

  • 功能描述

    256M Synchronous DRAM

更新时间:2026-8-1 19:38:00
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